两栖动物:从 13C 含量和叶侧特异性表皮蜡沉积推断气孔模式。

IF 3.6 2区 生物学 Q1 PLANT SCIENCES
Balzhan Askanbayeva, Jitka Janová, Jiří Kubásek, Viktoria V Zeisler-Diehl, Lukas Schreiber, Christopher D Muir, Jiří Šantrůček
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引用次数: 0

摘要

背景和目的:目前还不完全清楚两性气孔技术(AS)与假两性气孔技术(HS)的益处和成本。在此,我们利用正面和背面表皮蜡中的 13C 丰度,量化了通过上部(正面)叶面气孔获取 CO2 的益处。此外,还研究了气孔与叶片反面的表皮蜡(EW)分布之间的关系:我们认为,在叶片正面和背面表皮附近的叶绿体中,角质蜡长链脂肪族化合物的 13C 含量记录了叶片内部的二氧化碳浓度。这种独特的特性源于:(i) 蜡的合成完全在表皮细胞中进行;(ii) 蜡的更新在整个叶片生命周期中持续进行。在不同辐照度下生长的四种 AS 和五种 HS 的化合物特异性和大量蜡 13C 丰度(δ)与两面性水平(ASL,所有气孔中正面的比例)相关。EW的同位素极性,即背面和正面δ(δab-δad)之差,被用来计算叶背腹二氧化碳梯度。估计了叶侧特定的 EW 沉积,即两叶水平(AWL),并将其与 ASL 联系起来:主要结果:在 HS 物种中,正面表皮的二氧化碳浓度低于背面表皮,与光照条件无关。在强光和弱光下生长的AS叶片中,同位素极性和二氧化碳梯度与ASL平行变化。与弱光相比,强光下生长的AS叶片ASL增加,δab-δad接近零值。ASL的变化与AWL的变化同时发生:结论:叶蜡同位素极性是一种新发现的叶片特征,它能区分低表皮蜡质和表皮蜡质物种,并表明暴露在阳光下的 AS 叶片中 ASL 的增加会降低叶片中叶的二氧化碳梯度。气孔和表皮蜡沉积遵循类似的叶侧模式。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Amphistomy: stomata patterning inferred from 13C content and leaf-side-specific deposition of epicuticular wax.

Background and aims: The benefits and costs of amphistomy (AS) vs. hypostomy (HS) are not fully understood. Here, we quantify benefits of access of CO2 through stomata on the upper (adaxial) leaf surface, using 13C abundance in the adaxial and abaxial epicuticular wax. Additionally, a relationship between the distribution of stomata and epicuticular wax on the opposite leaf sides is studied.

Methods: We suggest that the 13C content of long-chain aliphatic compounds of cuticular wax records the leaf internal CO2 concentration in chloroplasts adjacent to the adaxial and abaxial epidermes. This unique property stems from: (1) wax synthesis being located exclusively in epidermal cells; and (2) ongoing wax renewal over the whole leaf lifespan. Compound-specific and bulk wax 13C abundance (δ) was related to amphistomy level (ASL; as a fraction of adaxial in all stomata) of four AS and five HS species grown under various levels of irradiance. The isotopic polarity of epicuticular wax, i.e. the difference in abaxial and adaxial δ (δab - δad), was used to calculate the leaf dorsiventral CO2 gradient. Leaf-side-specific epicuticular wax deposition (amphiwaxy level) was estimated and related to ASL.

Key results: In HS species, the CO2 concentration in the adaxial epidermis was lower than in the abaxial one, independently of light conditions. In AS leaves grown in high-light and low-light conditions, the isotopic polarity and CO2 gradient varied in parallel with ASL. The AS leaves grown in high-light conditions increased ASL compared with low light, and δab - δad approached near-zero values. Changes in ASL occurred concomitantly with changes in amphiwaxy level.

Conclusions: Leaf wax isotopic polarity is a newly identified leaf trait, distinguishing between hypo- and amphistomatous species and indicating that increased ASL in sun-exposed AS leaves reduces the CO2 gradient across the leaf mesophyll. Stomata and epicuticular wax deposition follow similar leaf-side patterning.

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来源期刊
Annals of botany
Annals of botany 生物-植物科学
CiteScore
7.90
自引率
4.80%
发文量
138
审稿时长
3 months
期刊介绍: Annals of Botany is an international plant science journal publishing novel and rigorous research in all areas of plant science. It is published monthly in both electronic and printed forms with at least two extra issues each year that focus on a particular theme in plant biology. The Journal is managed by the Annals of Botany Company, a not-for-profit educational charity established to promote plant science worldwide. The Journal publishes original research papers, invited and submitted review articles, ''Research in Context'' expanding on original work, ''Botanical Briefings'' as short overviews of important topics, and ''Viewpoints'' giving opinions. All papers in each issue are summarized briefly in Content Snapshots , there are topical news items in the Plant Cuttings section and Book Reviews . A rigorous review process ensures that readers are exposed to genuine and novel advances across a wide spectrum of botanical knowledge. All papers aim to advance knowledge and make a difference to our understanding of plant science.
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