微带贴片天线在类似 TM50 模式下的增益增强和侧膜电平降低

IF 3.5 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Renan A. Santos;Helton S. Bernardo;Danilo H. Spadoti;Guilherme S. da Rosa;Rafael A. Penchel
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引用次数: 0

摘要

本文提出了一种工作于 TM50 类模式的微带贴片天线 (MPA),旨在提高增益并降低侧叶电平 (SLL)。我们的方法包括通过在零电场点引入三组横向槽来改变谐振器的表面电流分布。此外,我们还利用两个对称位置的存根来增强天线的增益。我们验证了在拟议的辐射器上适当组合这些假象可以显著降低 SLL,同时保持类似 TM50 模式的高增益特性。我们制作了一个原型,并在 7.6 GHz 左右的 C 波段对其进行了表征。结果表明,可以实现 15.0 dBi 的实际增益,SLL 降低到约 15 dB,这对于需要低剖面和紧凑尺寸的高增益应用来说是一个极佳的选择。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Gain Enhancement and Sidelobe Level Reduction of Microstrip Patch Antenna Under Operation of TM50-Like Mode
In this paper, we propose a microstrip patch antenna (MPA) operating in the TM50-like mode, designed for gain enhanced and sidelobe levels (SLLs) reduction. Our methodology involves altering the resonator’s surface current distribution by introducing three groups of transverse slots at points of null electric field. Additionally, two symmetrically positioned stubs are utilized to the antenna’s gain enhanced. We verify that proper combinations of such artifacts on the proposed radiators significantly reduce the SLL while maintaining the high-gain characteristics of the TM50-like mode. A prototype was fabricated and characterized for operation around 7.6 GHz, in the C band. The results demonstrate that a realized gain of 15.0 dBi can be achieved, with the SLL reduced to approximately 15 dB, representing an excellent option for high-gain applications requiring a low profile and compact size.
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来源期刊
CiteScore
6.50
自引率
12.50%
发文量
90
审稿时长
8 weeks
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