微带贴片天线在类似 TM50 模式下的增益增强和侧膜电平降低

IF 3.5 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Renan A. Santos;Helton S. Bernardo;Danilo H. Spadoti;Guilherme S. da Rosa;Rafael A. Penchel
{"title":"微带贴片天线在类似 TM50 模式下的增益增强和侧膜电平降低","authors":"Renan A. Santos;Helton S. Bernardo;Danilo H. Spadoti;Guilherme S. da Rosa;Rafael A. Penchel","doi":"10.1109/OJAP.2024.3406950","DOIUrl":null,"url":null,"abstract":"In this paper, we propose a microstrip patch antenna (MPA) operating in the TM50-like mode, designed for gain enhanced and sidelobe levels (SLLs) reduction. Our methodology involves altering the resonator’s surface current distribution by introducing three groups of transverse slots at points of null electric field. Additionally, two symmetrically positioned stubs are utilized to the antenna’s gain enhanced. We verify that proper combinations of such artifacts on the proposed radiators significantly reduce the SLL while maintaining the high-gain characteristics of the TM50-like mode. A prototype was fabricated and characterized for operation around 7.6 GHz, in the C band. The results demonstrate that a realized gain of 15.0 dBi can be achieved, with the SLL reduced to approximately 15 dB, representing an excellent option for high-gain applications requiring a low profile and compact size.","PeriodicalId":34267,"journal":{"name":"IEEE Open Journal of Antennas and Propagation","volume":null,"pages":null},"PeriodicalIF":3.5000,"publicationDate":"2024-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10543080","citationCount":"0","resultStr":"{\"title\":\"Gain Enhancement and Sidelobe Level Reduction of Microstrip Patch Antenna Under Operation of TM50-Like Mode\",\"authors\":\"Renan A. Santos;Helton S. Bernardo;Danilo H. Spadoti;Guilherme S. da Rosa;Rafael A. Penchel\",\"doi\":\"10.1109/OJAP.2024.3406950\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we propose a microstrip patch antenna (MPA) operating in the TM50-like mode, designed for gain enhanced and sidelobe levels (SLLs) reduction. Our methodology involves altering the resonator’s surface current distribution by introducing three groups of transverse slots at points of null electric field. Additionally, two symmetrically positioned stubs are utilized to the antenna’s gain enhanced. We verify that proper combinations of such artifacts on the proposed radiators significantly reduce the SLL while maintaining the high-gain characteristics of the TM50-like mode. A prototype was fabricated and characterized for operation around 7.6 GHz, in the C band. The results demonstrate that a realized gain of 15.0 dBi can be achieved, with the SLL reduced to approximately 15 dB, representing an excellent option for high-gain applications requiring a low profile and compact size.\",\"PeriodicalId\":34267,\"journal\":{\"name\":\"IEEE Open Journal of Antennas and Propagation\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.5000,\"publicationDate\":\"2024-03-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10543080\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Open Journal of Antennas and Propagation\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10543080/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Open Journal of Antennas and Propagation","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10543080/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

本文提出了一种工作于 TM50 类模式的微带贴片天线 (MPA),旨在提高增益并降低侧叶电平 (SLL)。我们的方法包括通过在零电场点引入三组横向槽来改变谐振器的表面电流分布。此外,我们还利用两个对称位置的存根来增强天线的增益。我们验证了在拟议的辐射器上适当组合这些假象可以显著降低 SLL,同时保持类似 TM50 模式的高增益特性。我们制作了一个原型,并在 7.6 GHz 左右的 C 波段对其进行了表征。结果表明,可以实现 15.0 dBi 的实际增益,SLL 降低到约 15 dB,这对于需要低剖面和紧凑尺寸的高增益应用来说是一个极佳的选择。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Gain Enhancement and Sidelobe Level Reduction of Microstrip Patch Antenna Under Operation of TM50-Like Mode
In this paper, we propose a microstrip patch antenna (MPA) operating in the TM50-like mode, designed for gain enhanced and sidelobe levels (SLLs) reduction. Our methodology involves altering the resonator’s surface current distribution by introducing three groups of transverse slots at points of null electric field. Additionally, two symmetrically positioned stubs are utilized to the antenna’s gain enhanced. We verify that proper combinations of such artifacts on the proposed radiators significantly reduce the SLL while maintaining the high-gain characteristics of the TM50-like mode. A prototype was fabricated and characterized for operation around 7.6 GHz, in the C band. The results demonstrate that a realized gain of 15.0 dBi can be achieved, with the SLL reduced to approximately 15 dB, representing an excellent option for high-gain applications requiring a low profile and compact size.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
6.50
自引率
12.50%
发文量
90
审稿时长
8 weeks
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信