Alexandra Ibanez, Mathieu Leroux, Nikita Nikitskiy, Wilfried Desrat, Matthieu Moret, Pierre Valvin, Guillaume Cassabois, Julien Brault, Bernard Gil, Fumiya Chugenji, Kirihara Taiga, Muhamad Ajmal Khan, Hideki Hirayama
{"title":"合金杂乱效应对嵌入氮化铝势垒的(Al,Ga)N 量子阱发射图各向异性的影响","authors":"Alexandra Ibanez, Mathieu Leroux, Nikita Nikitskiy, Wilfried Desrat, Matthieu Moret, Pierre Valvin, Guillaume Cassabois, Julien Brault, Bernard Gil, Fumiya Chugenji, Kirihara Taiga, Muhamad Ajmal Khan, Hideki Hirayama","doi":"10.1002/pssb.202400215","DOIUrl":null,"url":null,"abstract":"The polarized photoluminescence emitted on the edge of a series of aluminum‐rich (Al,Ga)N‐AlN quantum wells (QWs) grown by molecular beam epitaxy on AlN templates deposited by metal organic chemical vapor deposition on c‐plane sapphire is measured. The contrast and the principal axis of the emission diagrams for 2 nm‐thick (Al,Ga)N QWs grown for aluminum compositions between 40% and 90% are studied. The light is emitted on the edge of the QWs at wavelengths going from 280 nm down to 209 nm. The emission diagram, a change from oblate to prolate with respect to the in‐plane orientation, for an aluminum composition is found to occur around 72%, that is, at an emission wavelength of about 235 nm. The orientations and shapes of the edge‐emission diagrams indicate that the fluctuations of the composition of the (Al,Ga)N confining layer are deep enough for producing intravalence band mixings. This property, that acts in concert with the built‐in strain and quantum‐confined Stark effect, contributes to the anisotropy of the light emission when the aluminum composition reaches 60–70%, that is, for an emission wavelength of 260–235 nm.","PeriodicalId":20406,"journal":{"name":"Physica Status Solidi B-basic Solid State Physics","volume":null,"pages":null},"PeriodicalIF":1.5000,"publicationDate":"2024-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The Influence of Alloy Disorder Effects on the Anisotropy of Emission Diagrams in (Al,Ga)N Quantum Wells Embedded into AlN Barriers\",\"authors\":\"Alexandra Ibanez, Mathieu Leroux, Nikita Nikitskiy, Wilfried Desrat, Matthieu Moret, Pierre Valvin, Guillaume Cassabois, Julien Brault, Bernard Gil, Fumiya Chugenji, Kirihara Taiga, Muhamad Ajmal Khan, Hideki Hirayama\",\"doi\":\"10.1002/pssb.202400215\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The polarized photoluminescence emitted on the edge of a series of aluminum‐rich (Al,Ga)N‐AlN quantum wells (QWs) grown by molecular beam epitaxy on AlN templates deposited by metal organic chemical vapor deposition on c‐plane sapphire is measured. The contrast and the principal axis of the emission diagrams for 2 nm‐thick (Al,Ga)N QWs grown for aluminum compositions between 40% and 90% are studied. The light is emitted on the edge of the QWs at wavelengths going from 280 nm down to 209 nm. The emission diagram, a change from oblate to prolate with respect to the in‐plane orientation, for an aluminum composition is found to occur around 72%, that is, at an emission wavelength of about 235 nm. The orientations and shapes of the edge‐emission diagrams indicate that the fluctuations of the composition of the (Al,Ga)N confining layer are deep enough for producing intravalence band mixings. This property, that acts in concert with the built‐in strain and quantum‐confined Stark effect, contributes to the anisotropy of the light emission when the aluminum composition reaches 60–70%, that is, for an emission wavelength of 260–235 nm.\",\"PeriodicalId\":20406,\"journal\":{\"name\":\"Physica Status Solidi B-basic Solid State Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2024-05-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica Status Solidi B-basic Solid State Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1002/pssb.202400215\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Status Solidi B-basic Solid State Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1002/pssb.202400215","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
The Influence of Alloy Disorder Effects on the Anisotropy of Emission Diagrams in (Al,Ga)N Quantum Wells Embedded into AlN Barriers
The polarized photoluminescence emitted on the edge of a series of aluminum‐rich (Al,Ga)N‐AlN quantum wells (QWs) grown by molecular beam epitaxy on AlN templates deposited by metal organic chemical vapor deposition on c‐plane sapphire is measured. The contrast and the principal axis of the emission diagrams for 2 nm‐thick (Al,Ga)N QWs grown for aluminum compositions between 40% and 90% are studied. The light is emitted on the edge of the QWs at wavelengths going from 280 nm down to 209 nm. The emission diagram, a change from oblate to prolate with respect to the in‐plane orientation, for an aluminum composition is found to occur around 72%, that is, at an emission wavelength of about 235 nm. The orientations and shapes of the edge‐emission diagrams indicate that the fluctuations of the composition of the (Al,Ga)N confining layer are deep enough for producing intravalence band mixings. This property, that acts in concert with the built‐in strain and quantum‐confined Stark effect, contributes to the anisotropy of the light emission when the aluminum composition reaches 60–70%, that is, for an emission wavelength of 260–235 nm.
期刊介绍:
physica status solidi is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state and materials physics, from basic science to applications and devices. Being among the largest and most important international publications, the pss journals publish review articles, letters and original work as well as special issues and conference contributions.
physica status solidi b – basic solid state physics is devoted to topics such as theoretical and experimental investigations of the atomistic and electronic structure of solids in general, phase transitions, electronic and optical properties of low-dimensional, nano-scale, strongly correlated, or disordered systems, superconductivity, magnetism, ferroelectricity etc.