{"title":"封面图片，第 2 卷第 2 号，2024 年 5 月","authors":"Jinghai Li, Yanyan Gong, William W. Yu","doi":"10.1002/elt2.53","DOIUrl":null,"url":null,"abstract":"<p>Perovskite field-effect transistors (FETs) find their commercial use in logic circuits manufactured through solution printing. However, the preparation of high-performance FETs that satisfy commercial standards is significantly challenged by the issue of ion migration. In the cover image (DOI: 10.1002/elt2.28), there is a logic circuit background, a perovskite FET structure diagram, and an enlarged schematic diagram of suppression of ion migration.\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure></p>","PeriodicalId":100403,"journal":{"name":"Electron","volume":"2 2","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/elt2.53","citationCount":"0","resultStr":"{\"title\":\"Cover Image, Volume 2, Number 2, May 2024\",\"authors\":\"Jinghai Li, Yanyan Gong, William W. Yu\",\"doi\":\"10.1002/elt2.53\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Perovskite field-effect transistors (FETs) find their commercial use in logic circuits manufactured through solution printing. However, the preparation of high-performance FETs that satisfy commercial standards is significantly challenged by the issue of ion migration. In the cover image (DOI: 10.1002/elt2.28), there is a logic circuit background, a perovskite FET structure diagram, and an enlarged schematic diagram of suppression of ion migration.\\n <figure>\\n <div><picture>\\n <source></source></picture><p></p>\\n </div>\\n </figure></p>\",\"PeriodicalId\":100403,\"journal\":{\"name\":\"Electron\",\"volume\":\"2 2\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-05-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/elt2.53\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electron\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/elt2.53\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electron","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/elt2.53","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Perovskite field-effect transistors (FETs) find their commercial use in logic circuits manufactured through solution printing. However, the preparation of high-performance FETs that satisfy commercial standards is significantly challenged by the issue of ion migration. In the cover image (DOI: 10.1002/elt2.28), there is a logic circuit background, a perovskite FET structure diagram, and an enlarged schematic diagram of suppression of ion migration.
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