氧化镁表面钝化对二氧化锡染料敏化太阳能电池光电性能的影响

Sandeep A. Arote, Dipak L. Gapale, Balasaheb M. Palve, Prashant K. Baviskar
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引用次数: 0

摘要

该研究强调了氧化镁涂层对二氧化锡光电极表面改性对染料敏化太阳能电池(DSSC)光电特性的影响。采用溶胶-凝胶衍生浸涂技术在二氧化锡光电极上制备了一层氧化镁薄膜。通过 X 射线衍射 (XRD)、扫描电子显微镜 (SEM)、能量色散 X 射线光谱 (EDS)、X 射线光电子能谱 (XPS) 和紫外可见分光光度计对裸二氧化锡和氧化镁涂层二氧化锡复合光阳极进行了表征。光吸收研究表明,氧化镁涂层对二氧化锡的修饰增加了光阳极在可见光区域的吸收。通过制备 FTO|SnO2|Dye|MgO|Electrolyte|Pt 涂层 FTO 器件结构演示了太阳能电池,并进行了电流密度-电压(J-V)测量。研究了氧化镁涂层前驱体浓度对 DSSC 性能的影响。结果发现,在二氧化锡上优化涂覆氧化镁 90 秒后,所有光伏参数都得到了改善,与使用裸二氧化锡光阳极的 DSSC 相比,效率提高了 42%。氧化镁涂层可以防止电子从半导体传导带反向转移到染料分子或氧化还原物种的 HOMO,从而减少陷阱态并抑制界面重组损耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Influence of surface passivation by MgO on photovoltaic performance of SnO2 based dye-sensitized solar cells

Influence of surface passivation by MgO on photovoltaic performance of SnO2 based dye-sensitized solar cells

The study highlights effect of surface modification of SnO2 photoelectrode by MgO coating on photovoltaic properties of dye-sensitized solar cells (DSSCs). A thin coating of MgO on SnO2 photoelectrode was prepared using sol-gel-derived dip coating technique. The bare SnO2 and MgO coated SnO2 composite photoanodes was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS) and UV–vis spectrophotometer. The optical absorption study revealed that the modification in SnO2 by MgO coating caused an increase in absorption by photoanode in visible region. The solar cell was demonstrated by preparing FTO|SnO2|Dye|MgO|Electrolyte|Pt coated FTO device structure and tested with current density-voltage (J-V) measurement. The effect of precursor concentration of MgO coating on the performance of DSSCs were investigated. It was found that, optimized coating of MgO for 90 seconds on SnO2 improved all photovoltaic parameters, resulting in enhancement in efficiency by 42% compared to that of DSSC with bare SnO2 photoanode. The coating of MgO would have reduced the trap states and suppressed interfacial recombination losses by preventing back electron transfer from the conduction band of the semiconductor to HOMO of dye molecule or redox species.

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