掺钛半赫斯勒合金 Ni1-xTixMnSb 的晶体结构、磁性和电传输特性

A. Rutkauskas, S. Kichanov, T. Vershinina, G. S. Rymski, N. Dang, T. P. Hoang, T. A. Tran, N. Phan, D. P. T. Tien, P. D. Thinh, D. T. Khan
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引用次数: 0

摘要

采用标准固相合成法合成了[式:见正文]范围内的 Ni[式:见正文]TixMnSb 多晶合金。利用中子粉末衍射和磁阻测量法研究了合金的晶体、磁性和电性。结果表明,在 2.5-300 K 的温度范围内用 Ti 替代 Ni 不会改变 NiMnSb 的晶体和磁性结构。有序镍磁矩接近零。对 Ni[式中:见正文]TixMnSb 合金(其中[式中:见正文])电输运特性的研究表明,在低温下会出现半金属态,而在温度超过 160 K 时则会出现金属导电性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Crystal structure, magnetic and electrical transport properties of titanium-doped half-Heusler alloys Ni1−xTixMnSb
Ni[Formula: see text]TixMnSb polycrystalline alloys in the range [Formula: see text] were synthesized employing the standard solid-phase synthesis method. The crystal, magnetic, as well as electrical properties of the alloys were investigated using neutron powder diffraction and magneto-resistance measurements. The results reveal that the substitution of Ti for Ni within the temperature range of 2.5–300 K does not induce alterations in the crystal and magnetic structures of NiMnSb. The ordered Ni magnetic moment approaches zero. The study of the electrical transport properties of the Ni[Formula: see text]TixMnSb alloys, where [Formula: see text], has demonstrated a half-metallic state at low temperatures and metallic conductivity for temperatures exceeding 160 K. A semiconductor state manifests at titanium concentrations of x = 0.2 and was observed at temperatures below 21 K. The obtained experimental results are elucidated through first-principles theoretical calculations.
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