An InGaAs-based Fin-EHBTFET with heterogate and barrier layer for high performance

This paper proposes a fin electron-hole bilayer tunneling field-effect transistor with a heterogate and an InAlAs barrier layer (HBF-EHBTFET). The heterogate can suppress off-state leakage caused by point tunneling, while the InAlAs barrier layer prevents source-drain direct tunneling, significantly reducing off-state current (Ioff). P-type Gaussian doping can not only solve the problem of inability to generate a hole layer during device fabrication, but also reduce the turn-on voltage of line-tunneling, ultimately increasing on-state current and reducing average subthreshold swing (SSavg). By optimizing parameters of the heterogate and InAlAs barrier layer, HBF-EHBTFET can obtain Ioff of 2.37×10-16 A/μm, SSavg of 17.97 mV/dec, cutoff frequency (fT) of 13.2 GHz, and gain bandwidth product (GBW) of 1.58 GHz. Compared with traditional EHBTFET, HBF-EHBTFET exhibits a reduction in Ioff by four orders of magnitude, a decrease in SSavg by 65.27%, and an increase in fT and GBW by 78.59 % and 93.62 %, respectively.