利用深紫外拉曼光谱研究 H+ 植入 4H-SiC 的晶格缺陷分布

Gengyu Wang, Wenbo Luo, Dailei Zhu, Yuedong Wang, Y. Shuai, Chuangui Wu, W. Zhang
{"title":"利用深紫外拉曼光谱研究 H+ 植入 4H-SiC 的晶格缺陷分布","authors":"Gengyu Wang, Wenbo Luo, Dailei Zhu, Yuedong Wang, Y. Shuai, Chuangui Wu, W. Zhang","doi":"10.1116/6.0003643","DOIUrl":null,"url":null,"abstract":"The defects distribution of ion-implanted SiC is a key to understanding changes in the electronic, optical, and mechanical properties of SiC devices. However, accessing the defect distribution within the sample primarily relies on simulation, yet a number of factors remain unaccounted for in the simulation results, ultimately resulting in numerous inaccuracies. To address this issue, a defect distribution investigation method based on the combination of argon ion etching and deep-ultraviolet (DUV) Raman spectroscopy has been established. The defects at different depths were exposed to the surface by etching, and the crystal quality of the surface layer was assessed using Raman spectra with a 266 nm DUV laser. The spectra for the H+ implanted 4H-SiC showed that the full width at half maximum of the transverse optical mode at 781 cm−1 and the longitudinal optical mode at 965 cm−1 exhibited an increasing and then decreasing trend, approximate to a Gaussian distribution. These results were confirmed with the transmission electron microscopy cross-sectional image and SRIM-2013 simulation. The establishment of this analytical investigation method can be widely applied to other semiconductor materials, without the need for electrodes and sample contamination.","PeriodicalId":509398,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Lattice defects distribution of H+ implanted 4H-SiC investigated by deep-ultraviolet Raman spectroscopy\",\"authors\":\"Gengyu Wang, Wenbo Luo, Dailei Zhu, Yuedong Wang, Y. Shuai, Chuangui Wu, W. Zhang\",\"doi\":\"10.1116/6.0003643\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The defects distribution of ion-implanted SiC is a key to understanding changes in the electronic, optical, and mechanical properties of SiC devices. However, accessing the defect distribution within the sample primarily relies on simulation, yet a number of factors remain unaccounted for in the simulation results, ultimately resulting in numerous inaccuracies. To address this issue, a defect distribution investigation method based on the combination of argon ion etching and deep-ultraviolet (DUV) Raman spectroscopy has been established. The defects at different depths were exposed to the surface by etching, and the crystal quality of the surface layer was assessed using Raman spectra with a 266 nm DUV laser. The spectra for the H+ implanted 4H-SiC showed that the full width at half maximum of the transverse optical mode at 781 cm−1 and the longitudinal optical mode at 965 cm−1 exhibited an increasing and then decreasing trend, approximate to a Gaussian distribution. These results were confirmed with the transmission electron microscopy cross-sectional image and SRIM-2013 simulation. The establishment of this analytical investigation method can be widely applied to other semiconductor materials, without the need for electrodes and sample contamination.\",\"PeriodicalId\":509398,\"journal\":{\"name\":\"Journal of Vacuum Science & Technology A\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Vacuum Science & Technology A\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1116/6.0003643\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology A","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0003643","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

离子注入碳化硅的缺陷分布是了解碳化硅器件的电子、光学和机械性能变化的关键。然而,获取样品内部的缺陷分布主要依靠模拟,但模拟结果中仍有许多因素未考虑在内,最终导致许多不准确的结果。为了解决这个问题,我们建立了一种基于氩离子刻蚀和深紫外(DUV)拉曼光谱相结合的缺陷分布调查方法。通过刻蚀将不同深度的缺陷暴露在表面上,并利用 266 nm DUV 激光拉曼光谱评估表层的晶体质量。H+ 植入的 4H-SiC 的光谱显示,781 cm-1 处的横向光学模式和 965 cm-1 处的纵向光学模式的半最大全宽呈现出先增大后减小的趋势,近似于高斯分布。透射电子显微镜截面图像和 SRIM-2013 模拟证实了这些结果。这种分析调查方法的建立可广泛应用于其他半导体材料,而无需电极和样品污染。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Lattice defects distribution of H+ implanted 4H-SiC investigated by deep-ultraviolet Raman spectroscopy
The defects distribution of ion-implanted SiC is a key to understanding changes in the electronic, optical, and mechanical properties of SiC devices. However, accessing the defect distribution within the sample primarily relies on simulation, yet a number of factors remain unaccounted for in the simulation results, ultimately resulting in numerous inaccuracies. To address this issue, a defect distribution investigation method based on the combination of argon ion etching and deep-ultraviolet (DUV) Raman spectroscopy has been established. The defects at different depths were exposed to the surface by etching, and the crystal quality of the surface layer was assessed using Raman spectra with a 266 nm DUV laser. The spectra for the H+ implanted 4H-SiC showed that the full width at half maximum of the transverse optical mode at 781 cm−1 and the longitudinal optical mode at 965 cm−1 exhibited an increasing and then decreasing trend, approximate to a Gaussian distribution. These results were confirmed with the transmission electron microscopy cross-sectional image and SRIM-2013 simulation. The establishment of this analytical investigation method can be widely applied to other semiconductor materials, without the need for electrodes and sample contamination.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信