{"title":"通过 AlGaN/AlN/GaN 异质结纳米线为水下光通信实现高响应率和快速响应速度的太阳盲光电探测器","authors":"Junjun Xue, Saisai Wang, Jiaming Tong, Guofeng Yang, Irina Parkhomenko, Fadei Komarov, Yu Liu, Qing Cai*, Jin Wang* and Ting Zhi*, ","doi":"10.1021/acsaelm.4c00636","DOIUrl":null,"url":null,"abstract":"<p >Realizing energy-efficient devices with sustainable and independent operation is a large challenge for next-generation photodetection systems in various environments. In this study, we present a high-response and fast-speed ultraviolet photodetector (UV PD) based on the p-AlGaN/AlN/n-GaN nanowires (NWs) heterojunction, which could operate at a 0 V bias for underwater photodetection through the photoelectrochemical (PEC) process. Compared to the UV PD without AlN insertion, the detection performance would be increased to 3–5 times for underwater solar-blind UV detection under the effect of heterostructure band engineering to prevent carrier drift and recombination at 0 V bias under 255 nm illumination. Furthermore, the photoresponsivity and response speed can be further improved by a surface modification strategy to adjust the carrier transport between the nitride semiconductor and electrolyte. These promising results lay a solid foundation for the development of III-nitride high-efficiency, self-powered PEC photosynthesis devices in the future.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3000,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Achieving a High-Responsivity and Fast-Response-Speed Solar-Blind Photodetector for Underwater Optical Communication via AlGaN/AlN/GaN Heterojunction Nanowires\",\"authors\":\"Junjun Xue, Saisai Wang, Jiaming Tong, Guofeng Yang, Irina Parkhomenko, Fadei Komarov, Yu Liu, Qing Cai*, Jin Wang* and Ting Zhi*, \",\"doi\":\"10.1021/acsaelm.4c00636\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Realizing energy-efficient devices with sustainable and independent operation is a large challenge for next-generation photodetection systems in various environments. In this study, we present a high-response and fast-speed ultraviolet photodetector (UV PD) based on the p-AlGaN/AlN/n-GaN nanowires (NWs) heterojunction, which could operate at a 0 V bias for underwater photodetection through the photoelectrochemical (PEC) process. Compared to the UV PD without AlN insertion, the detection performance would be increased to 3–5 times for underwater solar-blind UV detection under the effect of heterostructure band engineering to prevent carrier drift and recombination at 0 V bias under 255 nm illumination. Furthermore, the photoresponsivity and response speed can be further improved by a surface modification strategy to adjust the carrier transport between the nitride semiconductor and electrolyte. These promising results lay a solid foundation for the development of III-nitride high-efficiency, self-powered PEC photosynthesis devices in the future.</p>\",\"PeriodicalId\":3,\"journal\":{\"name\":\"ACS Applied Electronic Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2024-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acsaelm.4c00636\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaelm.4c00636","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
实现可持续独立运行的高能效器件是下一代光电检测系统在各种环境中面临的巨大挑战。在这项研究中,我们提出了一种基于 p-AlGaN/AlN/n-GaN 纳米线(NWs)异质结的高响应、高速紫外光光电探测器(UV PD),它可以在 0 V 偏置下工作,通过光电化学(PEC)过程进行水下光电探测。在异质结构能带工程的作用下,与未插入 AlN 的紫外 PD 相比,在 255 纳米光照下的 0 V 偏压条件下,为防止载流子漂移和重组,水下日光盲紫外检测的检测性能将提高 3-5 倍。此外,通过表面改性策略调整氮化物半导体和电解质之间的载流子传输,还能进一步提高光致发光率和响应速度。这些充满希望的结果为未来开发 III 氮化物高效自供电 PEC 光合作用器件奠定了坚实的基础。
Achieving a High-Responsivity and Fast-Response-Speed Solar-Blind Photodetector for Underwater Optical Communication via AlGaN/AlN/GaN Heterojunction Nanowires
Realizing energy-efficient devices with sustainable and independent operation is a large challenge for next-generation photodetection systems in various environments. In this study, we present a high-response and fast-speed ultraviolet photodetector (UV PD) based on the p-AlGaN/AlN/n-GaN nanowires (NWs) heterojunction, which could operate at a 0 V bias for underwater photodetection through the photoelectrochemical (PEC) process. Compared to the UV PD without AlN insertion, the detection performance would be increased to 3–5 times for underwater solar-blind UV detection under the effect of heterostructure band engineering to prevent carrier drift and recombination at 0 V bias under 255 nm illumination. Furthermore, the photoresponsivity and response speed can be further improved by a surface modification strategy to adjust the carrier transport between the nitride semiconductor and electrolyte. These promising results lay a solid foundation for the development of III-nitride high-efficiency, self-powered PEC photosynthesis devices in the future.