{"title":"重离子和阿尔法粒子对栅极周围 TFET 和栅极周围 MOSFET 影响的比较分析","authors":"Pankaj Kumar , Kalyan Koley , Subindu Kumar","doi":"10.1016/j.micrna.2024.207875","DOIUrl":null,"url":null,"abstract":"<div><p>The single-event-transient (SET) effect due to heavy ions and alpha particles irradiation on n-type gate-all-around tunnel field effect transistor (GAA TFET) and n-type gate-all-around MOSFET (GAA MOSFET) has been carried out. Due to differences in carrier injection mechanisms, the generated electron-hole pairs (EHPs) due to high-energy particles (HEPs) act differently on the device. In addition, the impact of HEPs (i.e., heavy ions and alpha particles) on several locations along the channel are analyzed followed by the analysis of different energies of heavy ions and alpha particles irradiation on the device. Further, the impact of varying striking angles of HEPs on the device is also analyzed to get a close match as practically exposed device characteristic. Finally, the bipolar gain of the device has been analyzed which shows GAA TFET device has more immunity toward heavy ions strike and weak immunity toward alpha particle strikes when compared to the GAA MOSFET counterpart.</p></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":null,"pages":null},"PeriodicalIF":2.7000,"publicationDate":"2024-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comparative analysis of heavy ions and alpha particles impact on gate-all-around TFETs and gate-all-around MOSFETs\",\"authors\":\"Pankaj Kumar , Kalyan Koley , Subindu Kumar\",\"doi\":\"10.1016/j.micrna.2024.207875\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The single-event-transient (SET) effect due to heavy ions and alpha particles irradiation on n-type gate-all-around tunnel field effect transistor (GAA TFET) and n-type gate-all-around MOSFET (GAA MOSFET) has been carried out. Due to differences in carrier injection mechanisms, the generated electron-hole pairs (EHPs) due to high-energy particles (HEPs) act differently on the device. In addition, the impact of HEPs (i.e., heavy ions and alpha particles) on several locations along the channel are analyzed followed by the analysis of different energies of heavy ions and alpha particles irradiation on the device. Further, the impact of varying striking angles of HEPs on the device is also analyzed to get a close match as practically exposed device characteristic. Finally, the bipolar gain of the device has been analyzed which shows GAA TFET device has more immunity toward heavy ions strike and weak immunity toward alpha particle strikes when compared to the GAA MOSFET counterpart.</p></div>\",\"PeriodicalId\":100923,\"journal\":{\"name\":\"Micro and Nanostructures\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2024-05-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Micro and Nanostructures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2773012324001249\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nanostructures","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773012324001249","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
摘要
我们研究了重离子和阿尔法粒子辐照对 n 型全栅极隧道场效应晶体管（GAA TFET）和 n 型全栅极 MOSFET（GAA MOSFET）产生的单事件瞬态（SET）效应。由于载流子注入机制不同，高能粒子（HEP）产生的电子-空穴对（EHP）对器件的作用也不同。此外，还分析了高能粒子（即重离子和阿尔法粒子）对通道沿线多个位置的影响，然后分析了不同能量的重离子和阿尔法粒子辐照对器件的影响。此外，还分析了重离子和阿尔法粒子的不同照射角度对器件的影响，以获得与实际暴露的器件特性相近的匹配度。最后，对器件的双极增益进行了分析，结果表明与 GAA MOSFET 相比，GAA TFET 器件对重离子辐照有更强的抗扰性，而对α粒子辐照的抗扰性较弱。
Comparative analysis of heavy ions and alpha particles impact on gate-all-around TFETs and gate-all-around MOSFETs
The single-event-transient (SET) effect due to heavy ions and alpha particles irradiation on n-type gate-all-around tunnel field effect transistor (GAA TFET) and n-type gate-all-around MOSFET (GAA MOSFET) has been carried out. Due to differences in carrier injection mechanisms, the generated electron-hole pairs (EHPs) due to high-energy particles (HEPs) act differently on the device. In addition, the impact of HEPs (i.e., heavy ions and alpha particles) on several locations along the channel are analyzed followed by the analysis of different energies of heavy ions and alpha particles irradiation on the device. Further, the impact of varying striking angles of HEPs on the device is also analyzed to get a close match as practically exposed device characteristic. Finally, the bipolar gain of the device has been analyzed which shows GAA TFET device has more immunity toward heavy ions strike and weak immunity toward alpha particle strikes when compared to the GAA MOSFET counterpart.
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