利用有机 ILD 和新型 TFT 结构开发出弯曲半径极小的柔性 TFT 背板

IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Taewoong Kim, Younggug Seol, Sunhee Lee, Jinhwan Choi, Jinwoo Lee, Jintaek Kim, Pilsuk Lee, Juchan Park, Boik Park, Nguyen Thanh Tien, Kihyun Kim, Cheol Jang, Yong Jo Kim, Changhee Lee
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引用次数: 0

摘要

研究人员提出了一种新型柔性低温多晶硅薄膜晶体管(LTPS TFT),该薄膜晶体管位于具有有机 ILD 层、岛式 TFT 和垂直于应力方向的 TFT 沟道的 PI 基板上。使用有机 ILD 制造的 AMOLED 显示面板在以 4 毫米为滚动半径向外滚动 200,000 次或以 1 毫米为滚动半径向内折叠 200,000 次后,面板图像没有出现任何明显的劣化。另一种新型结构的 TFT 沟道垂直于应力方向,与沟道平行于应力方向的 TFT 的-0.6 V 的阈值电压变化相比,在弯曲半径为 3 mm 的情况下,经过 100,000 次向外弯曲循环后,在高漏极电流(HDC)可靠性测试中的-0.03 V 的阈值电压变化明显降低。在弯曲半径为 1 毫米的条件下向内弯曲 20 万次后,带有有机 ILD 层的 TFT 器件的可靠性测试结果表明,热载流子不稳定性(HCI)测试的导通电流变化率为 10.07%,负偏压热不稳定性(NBTI)测试的阈值电压变化率为 -0.31 V,滞后测试的阈值电压变化率为 -0.24 V,栅极绝缘体的击穿电压为 7.73 MV/cm,这些性能与带有无机 ILD(SiNx)的 TFT 器件相似。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Flexible TFT backplane development for extremely small bending radius with organic ILD and novel TFT structures

A new flexible low-temperature polycrystalline silicon thin film transistors (LTPS TFTs) on PI substrate with organic ILD layer, island TFT, and TFT channel perpendicular to stress direction was proposed. AMOLED display panel manufactured with organic ILD did not show any visible degradation of panel image after outward rolling cycles of 200,000 at rolling radius of 4 mm or inward folding cycles of 200,000 at folding radius of 1 mm. Another novel structure of TFT with channel perpendicular to stress direction significantly reduced change of threshold voltage of −0.03 V compared with change of threshold voltage of −0.6 V for TFT with channel parallel to stress direction for reliability test of high drain current (HDC) after 100,000 outward-bending cycles at bending radius of 3 mm. After inward-bending cycles of 200,000 at bending radius of 1 mm, reliability test results for TFT device with organic ILD layer showed that change of on-current is 10.07% for hot carrier instability (HCI) test, change of threshold voltage −0.31 V for negative bias thermal instability (NBTI) test, change of threshold voltage −0.24 V for hysteresis test, and breakdown voltage of gate insulator 7.73 MV/cm, respectively, and these performances are similar to those of TFT device with inorganic ILD (SiNx).

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来源期刊
Journal of the Society for Information Display
Journal of the Society for Information Display 工程技术-材料科学:综合
CiteScore
4.80
自引率
8.70%
发文量
98
审稿时长
3 months
期刊介绍: The Journal of the Society for Information Display publishes original works dealing with the theory and practice of information display. Coverage includes materials, devices and systems; the underlying chemistry, physics, physiology and psychology; measurement techniques, manufacturing technologies; and all aspects of the interaction between equipment and its users. Review articles are also published in all of these areas. Occasional special issues or sections consist of collections of papers on specific topical areas or collections of full length papers based in part on oral or poster presentations given at SID sponsored conferences.
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