Miaojia Cao , Qi Wang , Jiacheng Shang , Yurong Zhou , Gangqiang Dong , Limeng Zhang , Shuhan Li , Yuhan Cui , Fengzhen Liu , Yuqin Zhou
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引用次数: 0
摘要
掺杂锡的氧化铟（ITO）薄膜是广泛使用的透明导电氧化物（TCO）材料之一。近年来，反应等离子体沉积（RPD）技术已被用于制备高质量的 ITO 薄膜。在这里，铟锡合金被用来替代氧化铟锡作为 RPD 的蒸发源。通过与氧气反应，沉积出电导率为 3.40 × 103 S cm-1 和迁移率为 121.40 cm2 V-1 s-1 的 ITO 薄膜。高迁移率主要归功于高薄膜结晶率、高掺杂效率和低锡掺杂浓度。这种 ITO 薄膜被用作硅异质结（SHJ）太阳能电池的透明导电电极，并实现了 25.38 % 的转换效率。与使用氧化物靶制备的传统 ITO 薄膜相比，使用铟锡合金的反应沉积 ITO 薄膜成本更低，质量更高，更适合大规模生产。
Low-cost Sn-doped indium oxide films with high mobility by reactive plasma deposition for silicon heterojunction solar cells
Sn-doped indium oxide (ITO) film is one of the widely used transparent conductive oxide (TCO) materials. In recent years, reactive plasma deposition (RPD) technology has been used to prepare high-quality ITO film. Here, indium tin alloy is used to replace indium tin oxide as the evaporation source of RPD. By reacting with oxygen, the ITO film with a conductivity of 3.40 × 103 S cm−1 and a mobility of 121.40 cm2 V−1 s−1 is deposited. The high mobility is mainly due to the high film crystallization rate, high doping efficiency and low Sn doping concentration. The ITO films are used as transparent conducting electrodes in silicon heterojunction (SHJ) solar cells, and a conversion efficiency of 25.38 % is achieved. Compared with conventional ITO films prepared using oxide targets, reaction-deposited ITO films using indium tin alloy have lower cost and higher quality, it is more suitable for mass production.
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Solar Energy Materials & Solar Cells is intended as a vehicle for the dissemination of research results on materials science and technology related to photovoltaic, photothermal and photoelectrochemical solar energy conversion. Materials science is taken in the broadest possible sense and encompasses physics, chemistry, optics, materials fabrication and analysis for all types of materials.
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