{"title":"CuSb:通过硫化共溅铜-锑前驱体制造的富铜 CuSbS2 太阳能电池中的主要缺陷","authors":"Yuanfang Zhang, Jialiang Huang, Jialin Cong, Xiaojing Hao","doi":"10.1016/j.solmat.2024.112935","DOIUrl":null,"url":null,"abstract":"<div><p>Understanding the elemental composition and point defect properties is crucial for improving device performance in Chalcogenide thin film solar cells. The correlation between composition and defect characteristics of CuSbS<sub>2</sub> thin film sulfurized from metallic precursors was systematically investigated. Interestingly, it was found that CuSbS<sub>2</sub> polycrystalline thin film maintains an overall Cu-rich composition with a Cu/Sb ratio greater than 1, regardless of the initial precursor compositions. Besides, no obvious difference in the performance of integrated devices is observed, due to the similar Cu/Sb atomic ratios and electronic properties (carrier concentration and mobility) in these CuSbS<sub>2</sub> thin films. By conducting admittance spectroscopy analysis on CuSbS<sub>2</sub> devices, identical defect energy was obtained at 280 meV above the valence band maximum, which can be ascribed to Cu<sub>Sb</sub>. This could be mainly explained by the Cu-rich composition induced low formation energy of Cu<sub>Sb</sub>. Therefore, further defects engineering focusing on Cu<sub>Sb</sub> is required to boost the device efficiency of CuSbS<sub>2</sub> solar cells.</p></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":null,"pages":null},"PeriodicalIF":6.3000,"publicationDate":"2024-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0927024824002472/pdfft?md5=f57cd66e128db68c8697ebeec3b6f1f1&pid=1-s2.0-S0927024824002472-main.pdf","citationCount":"0","resultStr":"{\"title\":\"CuSb: The dominant defect in Cu-rich CuSbS2 solar cells fabricated by sulfurizing co-sputtered Cu–Sb precursor\",\"authors\":\"Yuanfang Zhang, Jialiang Huang, Jialin Cong, Xiaojing Hao\",\"doi\":\"10.1016/j.solmat.2024.112935\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Understanding the elemental composition and point defect properties is crucial for improving device performance in Chalcogenide thin film solar cells. The correlation between composition and defect characteristics of CuSbS<sub>2</sub> thin film sulfurized from metallic precursors was systematically investigated. Interestingly, it was found that CuSbS<sub>2</sub> polycrystalline thin film maintains an overall Cu-rich composition with a Cu/Sb ratio greater than 1, regardless of the initial precursor compositions. Besides, no obvious difference in the performance of integrated devices is observed, due to the similar Cu/Sb atomic ratios and electronic properties (carrier concentration and mobility) in these CuSbS<sub>2</sub> thin films. By conducting admittance spectroscopy analysis on CuSbS<sub>2</sub> devices, identical defect energy was obtained at 280 meV above the valence band maximum, which can be ascribed to Cu<sub>Sb</sub>. This could be mainly explained by the Cu-rich composition induced low formation energy of Cu<sub>Sb</sub>. Therefore, further defects engineering focusing on Cu<sub>Sb</sub> is required to boost the device efficiency of CuSbS<sub>2</sub> solar cells.</p></div>\",\"PeriodicalId\":429,\"journal\":{\"name\":\"Solar Energy Materials and Solar Cells\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":6.3000,\"publicationDate\":\"2024-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.sciencedirect.com/science/article/pii/S0927024824002472/pdfft?md5=f57cd66e128db68c8697ebeec3b6f1f1&pid=1-s2.0-S0927024824002472-main.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solar Energy Materials and Solar Cells\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0927024824002472\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENERGY & FUELS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solar Energy Materials and Solar Cells","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0927024824002472","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENERGY & FUELS","Score":null,"Total":0}
CuSb: The dominant defect in Cu-rich CuSbS2 solar cells fabricated by sulfurizing co-sputtered Cu–Sb precursor
Understanding the elemental composition and point defect properties is crucial for improving device performance in Chalcogenide thin film solar cells. The correlation between composition and defect characteristics of CuSbS2 thin film sulfurized from metallic precursors was systematically investigated. Interestingly, it was found that CuSbS2 polycrystalline thin film maintains an overall Cu-rich composition with a Cu/Sb ratio greater than 1, regardless of the initial precursor compositions. Besides, no obvious difference in the performance of integrated devices is observed, due to the similar Cu/Sb atomic ratios and electronic properties (carrier concentration and mobility) in these CuSbS2 thin films. By conducting admittance spectroscopy analysis on CuSbS2 devices, identical defect energy was obtained at 280 meV above the valence band maximum, which can be ascribed to CuSb. This could be mainly explained by the Cu-rich composition induced low formation energy of CuSb. Therefore, further defects engineering focusing on CuSb is required to boost the device efficiency of CuSbS2 solar cells.
期刊介绍:
Solar Energy Materials & Solar Cells is intended as a vehicle for the dissemination of research results on materials science and technology related to photovoltaic, photothermal and photoelectrochemical solar energy conversion. Materials science is taken in the broadest possible sense and encompasses physics, chemistry, optics, materials fabrication and analysis for all types of materials.