哌啶和吡啶系列无铅 Dion-Jacobson 相锡包晶石单晶及其在场效应晶体管中的应用。

IF 16 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY
ACS Nano Pub Date : 2024-05-20 DOI:10.1021/acsnano.3c11125
Chwenhaw Liao, Stefano Bernardi, Christopher G. Bailey, I. Hsiang Chao, Su-Ying Chien, Guoliang Wang, Yi-Hsuan Sun, Shi Tang, Jianghui Zheng, Jianpeng Yi, Ming-Hsuan Yu, Salvy P. Russo, Hung-Wei Yen, Dane R. McCamey, Brendan James Kennedy, Asaph Widmer-Cooper, Chu-Chen Chueh* and Anita W. Y. Ho-Baillie*, 
{"title":"哌啶和吡啶系列无铅 Dion-Jacobson 相锡包晶石单晶及其在场效应晶体管中的应用。","authors":"Chwenhaw Liao,&nbsp;Stefano Bernardi,&nbsp;Christopher G. Bailey,&nbsp;I. Hsiang Chao,&nbsp;Su-Ying Chien,&nbsp;Guoliang Wang,&nbsp;Yi-Hsuan Sun,&nbsp;Shi Tang,&nbsp;Jianghui Zheng,&nbsp;Jianpeng Yi,&nbsp;Ming-Hsuan Yu,&nbsp;Salvy P. Russo,&nbsp;Hung-Wei Yen,&nbsp;Dane R. McCamey,&nbsp;Brendan James Kennedy,&nbsp;Asaph Widmer-Cooper,&nbsp;Chu-Chen Chueh* and Anita W. Y. Ho-Baillie*,&nbsp;","doi":"10.1021/acsnano.3c11125","DOIUrl":null,"url":null,"abstract":"<p >Two-dimensional (2D) organic–inorganic metal halide perovskites have gained immense attention as alternatives to three-dimensional (3D) perovskites in recent years. The hydrophobic spacers in the layered structure of 2D perovskites make them more moisture-resistant than 3D perovskites. Moreover, they exhibit unique anisotropic electrical transport properties due to a structural confinement effect. In this study, four lead-free Dion–Jacobson (DJ) Sn-based phase perovskite single crystals, 3AMPSnI<sub>4</sub>, 4AMPSnI<sub>4</sub>, 3AMPYSnI<sub>4</sub>, and 4AMPYSnI<sub>4</sub> [AMP = (aminomethyl)-piperidinium, AMPY = (aminomethyl)pyridinium] are reported. Results reveal structural differences between them impacting the resulting optical properties. Namely, higher octahedron distortion results in a higher absorption edge. Density functional theory (DFT) is also performed to determine the trends in energy band diagrams, exciton binding energies, and formation energies due to structural differences among the four single crystals. Finally, a field-effect transistor (FET) based on 4AMPSnI<sub>4</sub> is demonstrated with a respectable hole mobility of 0.57 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup> requiring a low threshold voltage of only −2.5 V at a drain voltage of −40 V. To the best of our knowledge, this is the third DJ-phase perovskite FET reported to date.</p>","PeriodicalId":21,"journal":{"name":"ACS Nano","volume":"18 22","pages":"14176–14186"},"PeriodicalIF":16.0000,"publicationDate":"2024-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Piperidine and Pyridine Series Lead-Free Dion–Jacobson Phase Tin Perovskite Single Crystals and Their Applications for Field-Effect Transistors\",\"authors\":\"Chwenhaw Liao,&nbsp;Stefano Bernardi,&nbsp;Christopher G. Bailey,&nbsp;I. Hsiang Chao,&nbsp;Su-Ying Chien,&nbsp;Guoliang Wang,&nbsp;Yi-Hsuan Sun,&nbsp;Shi Tang,&nbsp;Jianghui Zheng,&nbsp;Jianpeng Yi,&nbsp;Ming-Hsuan Yu,&nbsp;Salvy P. Russo,&nbsp;Hung-Wei Yen,&nbsp;Dane R. McCamey,&nbsp;Brendan James Kennedy,&nbsp;Asaph Widmer-Cooper,&nbsp;Chu-Chen Chueh* and Anita W. Y. Ho-Baillie*,&nbsp;\",\"doi\":\"10.1021/acsnano.3c11125\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Two-dimensional (2D) organic–inorganic metal halide perovskites have gained immense attention as alternatives to three-dimensional (3D) perovskites in recent years. The hydrophobic spacers in the layered structure of 2D perovskites make them more moisture-resistant than 3D perovskites. Moreover, they exhibit unique anisotropic electrical transport properties due to a structural confinement effect. In this study, four lead-free Dion–Jacobson (DJ) Sn-based phase perovskite single crystals, 3AMPSnI<sub>4</sub>, 4AMPSnI<sub>4</sub>, 3AMPYSnI<sub>4</sub>, and 4AMPYSnI<sub>4</sub> [AMP = (aminomethyl)-piperidinium, AMPY = (aminomethyl)pyridinium] are reported. Results reveal structural differences between them impacting the resulting optical properties. Namely, higher octahedron distortion results in a higher absorption edge. Density functional theory (DFT) is also performed to determine the trends in energy band diagrams, exciton binding energies, and formation energies due to structural differences among the four single crystals. Finally, a field-effect transistor (FET) based on 4AMPSnI<sub>4</sub> is demonstrated with a respectable hole mobility of 0.57 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup> requiring a low threshold voltage of only −2.5 V at a drain voltage of −40 V. To the best of our knowledge, this is the third DJ-phase perovskite FET reported to date.</p>\",\"PeriodicalId\":21,\"journal\":{\"name\":\"ACS Nano\",\"volume\":\"18 22\",\"pages\":\"14176–14186\"},\"PeriodicalIF\":16.0000,\"publicationDate\":\"2024-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Nano\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acsnano.3c11125\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Nano","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsnano.3c11125","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

近年来,二维(2D)有机-无机金属卤化物过氧化物作为三维(3D)过氧化物的替代品受到了广泛关注。二维过氧化物层状结构中的疏水间隔使它们比三维过氧化物更能防潮。此外,由于结构约束效应,它们还表现出独特的各向异性电传输特性。本研究报告了四种无铅 Dion-Jacobson (DJ) 锡基相包光体单晶,即 3AMPSnI4、4AMPSnI4、3AMPYSnI4 和 4AMPYSnI4 [AMP = (aminomethyl)-piperidinium, AMPY = (aminomethyl)pyridinium] 。研究结果表明,它们之间的结构差异会影响所产生的光学特性。也就是说,较高的八面体畸变会导致较高的吸收边缘。此外,还进行了密度泛函理论(DFT)研究,以确定由于四种单晶体之间的结构差异而导致的能带图、激子结合能和形成能的变化趋势。最后,我们展示了基于 4AMPSnI4 的场效应晶体管 (FET),其空穴迁移率高达 0.57 cm2 V-1 s-1,在漏极电压为 -40 V 时阈值电压仅为 -2.5 V。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Piperidine and Pyridine Series Lead-Free Dion–Jacobson Phase Tin Perovskite Single Crystals and Their Applications for Field-Effect Transistors

Piperidine and Pyridine Series Lead-Free Dion–Jacobson Phase Tin Perovskite Single Crystals and Their Applications for Field-Effect Transistors

Piperidine and Pyridine Series Lead-Free Dion–Jacobson Phase Tin Perovskite Single Crystals and Their Applications for Field-Effect Transistors

Two-dimensional (2D) organic–inorganic metal halide perovskites have gained immense attention as alternatives to three-dimensional (3D) perovskites in recent years. The hydrophobic spacers in the layered structure of 2D perovskites make them more moisture-resistant than 3D perovskites. Moreover, they exhibit unique anisotropic electrical transport properties due to a structural confinement effect. In this study, four lead-free Dion–Jacobson (DJ) Sn-based phase perovskite single crystals, 3AMPSnI4, 4AMPSnI4, 3AMPYSnI4, and 4AMPYSnI4 [AMP = (aminomethyl)-piperidinium, AMPY = (aminomethyl)pyridinium] are reported. Results reveal structural differences between them impacting the resulting optical properties. Namely, higher octahedron distortion results in a higher absorption edge. Density functional theory (DFT) is also performed to determine the trends in energy band diagrams, exciton binding energies, and formation energies due to structural differences among the four single crystals. Finally, a field-effect transistor (FET) based on 4AMPSnI4 is demonstrated with a respectable hole mobility of 0.57 cm2 V–1 s–1 requiring a low threshold voltage of only −2.5 V at a drain voltage of −40 V. To the best of our knowledge, this is the third DJ-phase perovskite FET reported to date.

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来源期刊
ACS Nano
ACS Nano 工程技术-材料科学:综合
CiteScore
26.00
自引率
4.10%
发文量
1627
审稿时长
1.7 months
期刊介绍: ACS Nano, published monthly, serves as an international forum for comprehensive articles on nanoscience and nanotechnology research at the intersections of chemistry, biology, materials science, physics, and engineering. The journal fosters communication among scientists in these communities, facilitating collaboration, new research opportunities, and advancements through discoveries. ACS Nano covers synthesis, assembly, characterization, theory, and simulation of nanostructures, nanobiotechnology, nanofabrication, methods and tools for nanoscience and nanotechnology, and self- and directed-assembly. Alongside original research articles, it offers thorough reviews, perspectives on cutting-edge research, and discussions envisioning the future of nanoscience and nanotechnology.
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