锗同外延层中的凹坑形成

IF 2.1 4区 化学 Q3 CHEMISTRY, PHYSICAL
Maximilian Oezkent, Yujia Liu, Chen-Hsun Lu, Torsten Boeck, Kevin-P. Gradwohl
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引用次数: 0

摘要

随着锗(Ge)在半导体量子技术中的重要性与日俱增,生长无缺陷锗薄膜已变得至关重要。在此,我们使用分子束外延(MBE)技术进行了锗同外延生长实验。这要求基底表面光滑(σrms≤10 Å)且无污染。我们已经证明,普通的原位湿化学清洗方法是不够的。外来原子(如碳)会粘附在基底表面,并倾向于形成团簇,从而导致宏观生长缺陷,在此称为凹坑。这种凹坑的密度在 106 到 109 cm-2 之间。我们对凹坑的形成和特征进行了研究。凹坑在 370 °C 生长后出现,厚度超过 5 纳米。当生长温度低于 300 ℃ 时,凹坑密度会增加,而当温度高于 400 ℃ 时,凹坑密度会降低。此外,还介绍了一种在室温下以较高的生长速度(0.02 nm/s)生长 Ge 缓冲剂的方法。这将覆盖现有的污染并形成新的基底表面,从而防止凹坑的形成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Pit-formation in germanium homoepitaxial layers

Pit-formation in germanium homoepitaxial layers

Pit-formation in germanium homoepitaxial layers

With increasing importance of germanium (Ge) for semiconductor quantum technologies, the necessity of growing defect-free Ge films has become crucial. Here, Ge homoepitaxial growth experiments were conducted using molecular beam epitaxy (MBE). This requires a smooth (σrms10 Å) and contamination-free substrate surface. We have shown that common ex-situ wet chemical cleaning methods are not sufficient. Foreign atoms like carbon stick to the substrate surface and tend to form clusters which results in macroscopic growth defects which are referred here as pits. The density of such pits is in the range of 106 to 109 cm−2. The formation and characteristics of the pits have been investigated. Pits emerge after a growth at 370 °C with a thickness of above 5 nm . At growth temperatures lower than 300 °C, the density of pits increases, while it decreases at temperatures higher than 400 °C. Pits can be faceted with the main facets being {1 1 3} and {3 15 23}.

Furthermore, a procedure is presented involving a Ge buffer growth at room temperature with a high growth rate (0.02 nm/s). This leads to a coverage of present contamination and the formation of a new substrate surface which prevent pit formation.

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来源期刊
Surface Science
Surface Science 化学-物理:凝聚态物理
CiteScore
3.30
自引率
5.30%
发文量
137
审稿时长
25 days
期刊介绍: Surface Science is devoted to elucidating the fundamental aspects of chemistry and physics occurring at a wide range of surfaces and interfaces and to disseminating this knowledge fast. The journal welcomes a broad spectrum of topics, including but not limited to: • model systems (e.g. in Ultra High Vacuum) under well-controlled reactive conditions • nanoscale science and engineering, including manipulation of matter at the atomic/molecular scale and assembly phenomena • reactivity of surfaces as related to various applied areas including heterogeneous catalysis, chemistry at electrified interfaces, and semiconductors functionalization • phenomena at interfaces relevant to energy storage and conversion, and fuels production and utilization • surface reactivity for environmental protection and pollution remediation • interactions at surfaces of soft matter, including polymers and biomaterials. Both experimental and theoretical work, including modeling, is within the scope of the journal. Work published in Surface Science reaches a wide readership, from chemistry and physics to biology and materials science and engineering, providing an excellent forum for cross-fertilization of ideas and broad dissemination of scientific discoveries.
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