垂直氮化镓结场效应晶体管中漏极诱导沟道效应的研究

IF 16.4 1区 化学 Q1 CHEMISTRY, MULTIDISCIPLINARY
Zengfa Chen, Wen Yue, Renqiang Zhu, Ming Wang, Xi Zhu, Jinpei Lin, Shuangwu Huang, Xinke Liu
{"title":"垂直氮化镓结场效应晶体管中漏极诱导沟道效应的研究","authors":"Zengfa Chen, Wen Yue, Renqiang Zhu, Ming Wang, Xi Zhu, Jinpei Lin, Shuangwu Huang, Xinke Liu","doi":"10.1088/1361-6641/ad462a","DOIUrl":null,"url":null,"abstract":"\n In this work, a normally-off vertical gallium nitride (GaN) junction field-effect transistor (JFET) was demonstrated. The device shows a current on/off ratio of 3.6×10^10, a threshold voltage (VTH) of 1.64 V and a specific on-resistance (RON,SP) of 1.87 mΩ·cm^2. Drain induced channel effects were proposed to explain the change of gate current at different drain voltages. Drain current decline in the output characteristics and the reverse turn-on between drain and source can be explained by the effects. Technology computer aided design (TCAD) was used to simulate the change of the depletion region and confirm the explanation. Detailed analyses of the channel effects provide a reference for the design of new structures. The characteristics at different temperatures were demonstrated to show the stability of threshold voltage and specific on-resistance, which indicates the great potential of application in switching power circuit of vertical GaN JFETs.","PeriodicalId":1,"journal":{"name":"Accounts of Chemical Research","volume":null,"pages":null},"PeriodicalIF":16.4000,"publicationDate":"2024-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study of drain induced channel effects in vertical GaN junction field-effect transistors\",\"authors\":\"Zengfa Chen, Wen Yue, Renqiang Zhu, Ming Wang, Xi Zhu, Jinpei Lin, Shuangwu Huang, Xinke Liu\",\"doi\":\"10.1088/1361-6641/ad462a\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n In this work, a normally-off vertical gallium nitride (GaN) junction field-effect transistor (JFET) was demonstrated. The device shows a current on/off ratio of 3.6×10^10, a threshold voltage (VTH) of 1.64 V and a specific on-resistance (RON,SP) of 1.87 mΩ·cm^2. Drain induced channel effects were proposed to explain the change of gate current at different drain voltages. Drain current decline in the output characteristics and the reverse turn-on between drain and source can be explained by the effects. Technology computer aided design (TCAD) was used to simulate the change of the depletion region and confirm the explanation. Detailed analyses of the channel effects provide a reference for the design of new structures. The characteristics at different temperatures were demonstrated to show the stability of threshold voltage and specific on-resistance, which indicates the great potential of application in switching power circuit of vertical GaN JFETs.\",\"PeriodicalId\":1,\"journal\":{\"name\":\"Accounts of Chemical Research\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":16.4000,\"publicationDate\":\"2024-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Accounts of Chemical Research\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1088/1361-6641/ad462a\",\"RegionNum\":1,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Accounts of Chemical Research","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad462a","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

这项研究展示了一种常关断垂直氮化镓(GaN)结场效应晶体管(JFET)。该器件的电流导通/关断比为 3.6×10^10,阈值电压 (VTH) 为 1.64 V,比导通电阻 (RON,SP) 为 1.87 mΩ-cm^2。我们提出了漏极诱导沟道效应来解释不同漏极电压下的栅极电流变化。输出特性中的漏极电流下降以及漏极和源极之间的反向导通都可以用这种效应来解释。利用技术计算机辅助设计(TCAD)模拟了耗尽区的变化,证实了上述解释。对沟道效应的详细分析为新结构的设计提供了参考。不同温度下的特性显示了阈值电压和比导通电阻的稳定性,这表明垂直 GaN JFET 在开关功率电路中的应用潜力巨大。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study of drain induced channel effects in vertical GaN junction field-effect transistors
In this work, a normally-off vertical gallium nitride (GaN) junction field-effect transistor (JFET) was demonstrated. The device shows a current on/off ratio of 3.6×10^10, a threshold voltage (VTH) of 1.64 V and a specific on-resistance (RON,SP) of 1.87 mΩ·cm^2. Drain induced channel effects were proposed to explain the change of gate current at different drain voltages. Drain current decline in the output characteristics and the reverse turn-on between drain and source can be explained by the effects. Technology computer aided design (TCAD) was used to simulate the change of the depletion region and confirm the explanation. Detailed analyses of the channel effects provide a reference for the design of new structures. The characteristics at different temperatures were demonstrated to show the stability of threshold voltage and specific on-resistance, which indicates the great potential of application in switching power circuit of vertical GaN JFETs.
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来源期刊
Accounts of Chemical Research
Accounts of Chemical Research 化学-化学综合
CiteScore
31.40
自引率
1.10%
发文量
312
审稿时长
2 months
期刊介绍: Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance. Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.
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