Ayse Sünbül , David Lehninger , Amir Pourjafar , Shouzhuo Yang , Franz Müller , Ricardo Olivo , Thomas Kämpfe , Konrad Seidel , Lukas Eng , Maximilian Lederer
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引用次数: 0
摘要
铁电（FE）氧化锆铪（HZO）是数据存储应用的绝佳候选材料。然而，它也有一些可靠性方面的限制，如印记和保持力。在此，我们探讨了如何通过在 HZO 中掺入铝来克服这些限制。薄膜中的铝（Al）浓度和退火温度可调整 FE 行为。通过掠入射 X 射线衍射 (GIXRD) 测量确定了电学行为、晶体纹理和 FE 相之间的相关性。我们探索了降低的矫顽力场 (2Ec) 值和无唤醒 HZO 基铁电。我们展示了剩电势极化（2Pr）和 2Ec 随掺铝浓度和退火温度的变化而变化的可调性，以及晶体学质地。
Towards wake-up free ferroelectrics and scaling: Al-doped HZO and its crystallographic texture
Ferroelectric (FE) hafnium zirconium oxide (HZO) is an excellent candidate for data storage applications. However, it has some reliability limitations such as imprint and retention. Herein, we explore Al doping of HZO to overcome these limitations. FE behavior is tuned by the aluminum (Al) concentrations in the films and by annealing temperature. A correlation is done between electrical behavior, crystallographic texture, and FE phases determined by grazing-incidence X-ray diffraction (GIXRD) measurements. Reduced coercive field (2E) values and wake-up free HZO-based ferroelectrics are explored. We show the tunability of remanent polarization (2P) and 2E with respect to Al-doping concentration and anneal temperature, hence crystallographic texture.
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