{"title":"利用基于氧化锌纳米片/p-Si 的电子器件实现能量收集和薄膜开关的多功能特性","authors":"Parasuraman R , Rathnakannan K","doi":"10.1016/j.memori.2024.100114","DOIUrl":null,"url":null,"abstract":"<div><p>This work investigates and reports on the fabrication of a ZnO nanosheets/p-Si heterojunction energy harvester. The proposed nanostructure device exhibits two key functionalities: energy harvesting and memristive characteristics. This allows the device to perform multiple tasks. The ZnO nanostructure sheet was grown using a hydrothermal method. To minimize defect states at the electrode-substrate interface, an optimal phosphorus doping process was employed to achieve minimal substrate sheet resistance. Under an applied pushing force of 0.259 kgf, the energy harvester generated an output voltage and current of 0.5548 V and 44 μA, respectively. The proposed structure produces an output of 24.41 μW at 13 Hz for 2000 cycles. Investigation of the device's transfer characteristics revealed memristive behavior with an on/off ratio of 10<sup>7</sup>. These findings suggest that the multifunctional ZnO nanosheets/p-Si electronic device reported here has promising potential for applications in the Internet of Things (IoT).</p></div>","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"8 ","pages":"Article 100114"},"PeriodicalIF":0.0000,"publicationDate":"2024-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2773064624000173/pdfft?md5=e2703107978af818c579817cbc316862&pid=1-s2.0-S2773064624000173-main.pdf","citationCount":"0","resultStr":"{\"title\":\"Realization of multi-functional features with ZnO nanosheets/p-Si based electronic device for energy harvesting and memristive switching\",\"authors\":\"Parasuraman R , Rathnakannan K\",\"doi\":\"10.1016/j.memori.2024.100114\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This work investigates and reports on the fabrication of a ZnO nanosheets/p-Si heterojunction energy harvester. The proposed nanostructure device exhibits two key functionalities: energy harvesting and memristive characteristics. This allows the device to perform multiple tasks. The ZnO nanostructure sheet was grown using a hydrothermal method. To minimize defect states at the electrode-substrate interface, an optimal phosphorus doping process was employed to achieve minimal substrate sheet resistance. Under an applied pushing force of 0.259 kgf, the energy harvester generated an output voltage and current of 0.5548 V and 44 μA, respectively. The proposed structure produces an output of 24.41 μW at 13 Hz for 2000 cycles. Investigation of the device's transfer characteristics revealed memristive behavior with an on/off ratio of 10<sup>7</sup>. These findings suggest that the multifunctional ZnO nanosheets/p-Si electronic device reported here has promising potential for applications in the Internet of Things (IoT).</p></div>\",\"PeriodicalId\":100915,\"journal\":{\"name\":\"Memories - Materials, Devices, Circuits and Systems\",\"volume\":\"8 \",\"pages\":\"Article 100114\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.sciencedirect.com/science/article/pii/S2773064624000173/pdfft?md5=e2703107978af818c579817cbc316862&pid=1-s2.0-S2773064624000173-main.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Memories - Materials, Devices, Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2773064624000173\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Memories - Materials, Devices, Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773064624000173","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Realization of multi-functional features with ZnO nanosheets/p-Si based electronic device for energy harvesting and memristive switching
This work investigates and reports on the fabrication of a ZnO nanosheets/p-Si heterojunction energy harvester. The proposed nanostructure device exhibits two key functionalities: energy harvesting and memristive characteristics. This allows the device to perform multiple tasks. The ZnO nanostructure sheet was grown using a hydrothermal method. To minimize defect states at the electrode-substrate interface, an optimal phosphorus doping process was employed to achieve minimal substrate sheet resistance. Under an applied pushing force of 0.259 kgf, the energy harvester generated an output voltage and current of 0.5548 V and 44 μA, respectively. The proposed structure produces an output of 24.41 μW at 13 Hz for 2000 cycles. Investigation of the device's transfer characteristics revealed memristive behavior with an on/off ratio of 107. These findings suggest that the multifunctional ZnO nanosheets/p-Si electronic device reported here has promising potential for applications in the Internet of Things (IoT).