研究 Si-ZnO 二极管的电气和结构特性

IF 1.2 Q3 MULTIDISCIPLINARY SCIENCES

Journal of Physical Science Pub Date : 2024-05-02 DOI:10.21315/jps2024.35.1.2

Ahmed Waled Kasim

{"title":"研究 Si-ZnO 二极管的电气和结构特性","authors":"Ahmed Waled Kasim","doi":"10.21315/jps2024.35.1.2","DOIUrl":null,"url":null,"abstract":"Silicon-zinc oxide (Si-ZnO) junction has been prepared using the chemical bath technique. The zinc oxide layer was examined using different techniques, including X-ray spectroscopy and a UV-visible spectrophotometer. The ZnO film images show that the films are homogeneous with an average grain size of 70 nm, while the X-ray spectrum shows that the layers are amorphous with some crystalline phase peaks appearing between 2θ=20° and 35°, which belong to ZnO. Transmittance, absorbance and extinction coefficient were varied over the visible light wavelength range, and the energy gap of the films was about 2.6 eV. In both forward and reverse bias, the junction revealed diode characteristics. The influence of light on the current intensity was evident and reached about 240 mA compared to the current intensity in the dark state. Also, the current intensity of the diode increased at each applied voltage with the increase in the intensity of the light shining on it.","PeriodicalId":16757,"journal":{"name":"Journal of Physical Science","volume":null,"pages":null},"PeriodicalIF":1.2000,"publicationDate":"2024-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigate the Electrical and Structural Characteristics of the Si-ZnO Diode\",\"authors\":\"Ahmed Waled Kasim\",\"doi\":\"10.21315/jps2024.35.1.2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon-zinc oxide (Si-ZnO) junction has been prepared using the chemical bath technique. The zinc oxide layer was examined using different techniques, including X-ray spectroscopy and a UV-visible spectrophotometer. The ZnO film images show that the films are homogeneous with an average grain size of 70 nm, while the X-ray spectrum shows that the layers are amorphous with some crystalline phase peaks appearing between 2θ=20° and 35°, which belong to ZnO. Transmittance, absorbance and extinction coefficient were varied over the visible light wavelength range, and the energy gap of the films was about 2.6 eV. In both forward and reverse bias, the junction revealed diode characteristics. The influence of light on the current intensity was evident and reached about 240 mA compared to the current intensity in the dark state. Also, the current intensity of the diode increased at each applied voltage with the increase in the intensity of the light shining on it.\",\"PeriodicalId\":16757,\"journal\":{\"name\":\"Journal of Physical Science\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.2000,\"publicationDate\":\"2024-05-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Physical Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.21315/jps2024.35.1.2\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MULTIDISCIPLINARY SCIENCES\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physical Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.21315/jps2024.35.1.2","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MULTIDISCIPLINARY SCIENCES","Score":null,"Total":0}

引用次数: 0

摘要

利用化学浴技术制备了硅-氧化锌（Si-ZnO）结。使用不同的技术，包括 X 射线光谱和紫外可见分光光度计，对氧化锌层进行了检测。氧化锌薄膜图像显示薄膜是均匀的，平均晶粒大小为 70 nm，而 X 射线光谱显示薄膜层是无定形的，在 2θ=20° 和 35° 之间出现了一些属于氧化锌的晶相峰。在可见光波长范围内，透射率、吸光度和消光系数均有变化，薄膜的能隙约为 2.6 eV。在正向和反向偏压下，结都显示出二极管特性。光对电流强度的影响非常明显，与黑暗状态下的电流强度相比，达到约 240 mA。此外，随着照射到二极管上的光强度的增加，二极管在每个施加电压下的电流强度也在增加。

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Investigate the Electrical and Structural Characteristics of the Si-ZnO Diode

Silicon-zinc oxide (Si-ZnO) junction has been prepared using the chemical bath technique. The zinc oxide layer was examined using different techniques, including X-ray spectroscopy and a UV-visible spectrophotometer. The ZnO film images show that the films are homogeneous with an average grain size of 70 nm, while the X-ray spectrum shows that the layers are amorphous with some crystalline phase peaks appearing between 2θ=20° and 35°, which belong to ZnO. Transmittance, absorbance and extinction coefficient were varied over the visible light wavelength range, and the energy gap of the films was about 2.6 eV. In both forward and reverse bias, the junction revealed diode characteristics. The influence of light on the current intensity was evident and reached about 240 mA compared to the current intensity in the dark state. Also, the current intensity of the diode increased at each applied voltage with the increase in the intensity of the light shining on it.

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来源期刊

Journal of Physical Science Physics and Astronomy-Physics and Astronomy (all)

CiteScore

1.70

自引率

0.00%

发文量

期刊介绍： The aim of the journal is to disseminate latest scientific ideas and findings in the field of physical sciences among scientists in Malaysia and international regions. This journal is devoted to the publication of articles dealing with research works in Chemistry, Physics and Engineering. Review articles will also be considered. Manuscripts must be of scientific value and will be submitted to independent referees for review. Contributions must be written in English and must not have been published elsewhere.