原子序数在 5 至 15 之间的低速离子在硅和碳化硅中的电子停止截面的修正 El-Hoshy-Gibbons 模型

Kazuhiro Mochizuki, Tomoaki Nishimura, T. Mishima
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引用次数: 0

摘要

El-Hoshy-Gibbons 模型不仅减少了射弹(Z1)和目标的原子序数,而且减少了菲尔索夫模型中小角碰撞的碰撞参数(R0)。这一修改提高了硅以及碳化硅中低速离子的电子停止截面周期依赖性的可重复性,即 5 ≤ Z1 ≤ 15。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modified El-Hoshy−Gibbons model for electronic stopping cross sections in Si and SiC for low-velocity ions with atomic numbers between 5 and 15
The El-Hoshy−Gibbons model, which reduces not only the atomic numbers of projectiles (Z1) and targets but also the impact parameter for small-angle collisions (R0) in the Firsov model, was modified based on the relation between R0 and the Kohn−Sham radii of projectiles (rKS); namely, the reduction factor y of R0 was chosen to be 10 when R0 was larger rKS and 5 in the case R0 ≤ rKS. This modification improved the reproducibility of the periodic dependences of the electronic stopping cross sections in Si, as well as those in SiC, for low-velocity ions with 5 ≤ Z1 ≤ 15.
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