采用双介电材料的新型双栅极沟槽 SOI LDMOS（通过 TCAD 仿真研究

IF 16.4 1区化学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Accounts of Chemical Research Pub Date : 2024-05-10 DOI:10.1088/1361-6641/ad49c9

Jinjun Guo, Hongli Dai, Luoxin Wang, Yuming Xue, Haitao Lyu, Wenze Niu

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引用次数: 0

摘要

本文提出了一种新型双栅极沟槽硅绝缘体（SOI）横向双扩散金属氧化物半导体场效应晶体管（LDMOS）（DGDK-LDMOS）。DGDK-LDMOS 有两种介电材料：反向 L 型高 K（HK）薄膜和低 K（LK）埋入氧化层。HK 薄膜优化了漂移区表面的电场分布，吸引了电通量，而 LK 埋层氧化物的优异耐压性能可显著提高器件的击穿电压（BV）并降低比导通电阻（Ron,sp）。本文分析了 HK 薄膜和 LK 埋入氧化层对 LDMOS 的调制机理。结果表明，与传统 LDMOS（C-LDMOS）相比，当 HK 薄膜的介电常数为 25、LK 埋层氧化物的介电常数为 3 时，DGDK-LDMOS 的 BV 提高了 89.6%，Ron,sp 降低了 26.4%，优越性系数（FOM，FOM = BV2/Ron,sp）从 3.6 MW-cm-2 提高到 17.9 MW-cm-2，提高了 397.2%。同时，还讨论并比较了 DGDK-LDMOS 的输出特性、传输特性、晶格温度、交流特性和开关特性。

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A novel double-gate trench SOI LDMOS with double-dielectric material by TCAD Simulation Study

In this paper, a novel double-gate trench silicon-on-insulator (SOI) lateral double-diffused metal oxide semiconductor field-effect transistor (LDMOS) with double-dielectric material (DGDK-LDMOS) is proposed. DGDK-LDMOS has two dielectric materials: a reverse-L-shaped high-k (HK) thin film and an low-k (LK) buried oxide layer. The HK thin film optimizes the electric field distribution on the drift region surface, attracting electric flux, and the excellent withstand voltage of the LK buried oxide layer can significantly improve the breakdown voltage (BV) and reduce specific on-resistance (Ron,sp) of the device. The modulation mechanism of LDMOS by HK thin film and LK buried oxide layer is analyzed. The results show that compared with conventional LDMOS (C-LDMOS), when the permittivity of HK thin film is 25 and the permittivity of LK buried oxide is 3, the BV of DGDK-LDMOS is increased by 89.6%, the Ron,sp is decreased by 26.4%, and the figure of merit (FOM, FOM = BV2/Ron,sp) is increased by 397.2% from 3.6 MW·cm−2 to 17.9 MW·cm−2. Meanwhile, the output characteristics, transfer characteristics, lattice temperature, AC characteristics and switching characteristics of DGDK-LDMOS are also discussed and compared.

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来源期刊

Accounts of Chemical Research 化学-化学综合

CiteScore

31.40

自引率

1.10%

发文量

312

审稿时长

2 months

期刊介绍： Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance. Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.