通过 TCAD 仿真分析温度、掺杂和栅极材料工程对三栅极 SOI nFinFET 性能的影响

IF 1.6 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Transactions on Electrical and Electronic Materials Pub Date : 2024-05-11 DOI:10.1007/s42341-024-00543-2

Sridhar Panda, Rajat Subhra Parida, G. C. Dora, Raghunandan Swain, A. K. Panigrahy, Kishore Reddy Aduri, M. Suresh

引用次数: 0

摘要

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of Temperature, Doping and Gate Material Engineering on Tri-Gate SOI nFinFET Performance Through TCAD Simulation

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来源期刊

Transactions on Electrical and Electronic Materials MATERIALS SCIENCE, MULTIDISCIPLINARY-

CiteScore

4.30

自引率

0.00%

发文量

期刊介绍： The main purpose of Transactions on Electrical and Electronic Materials (Trans. Electr. Electron. Mater. : TEEM) is to provide an open forum to report and share significant new findings on electrical and electronic materials for the materials research communities.The topics covered by the journal include but not limited to new semiconductor materials and devices, electronic ceramics, electrical insulation materials, thin film devices/sensors, display/optical devices, superconducting magnetic materials and devices, nanomaterials and nanodevices, photovoltaic materials and devices, and disaster prevention materials.Transactions on Electrical and Electronic Materials enables professionals in research and industry to keep track of up-to-date developments in the above-mentioned fields and their importance for future developments and success.