基于 IGZO 背板单片集成的有源矩阵 microLED 显示器

IF 1.7 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of the Society for Information Display Pub Date : 2024-05-13 DOI:10.1002/jsid.1299

Oliver Durnan, Vikrant Kumar, Reem Alshanbari, Megan Noga, Ioannis Kymissis

{"title":"基于 IGZO 背板单片集成的有源矩阵 microLED 显示器","authors":"Oliver Durnan, Vikrant Kumar, Reem Alshanbari, Megan Noga, Ioannis Kymissis","doi":"10.1002/jsid.1299","DOIUrl":null,"url":null,"abstract":"<p>This paper presents a method of monolithically integrating gallium nitride micrometer-scale light-emitting diodes (microLEDs) with an indium gallium zinc oxide (IGZO) thin-film transistor (TFT) backplane to produce an active-matrix microdisplay. After discussion of the fabrication process, individual LEDs, TFTs, and the integrated system are characterized. Results demonstrate a 32 × 32 pixel, 78.4 PPI microdisplay with luminance exceeding 1500 nits. The dynamic set and hold behaviors of the active-matrix pixel circuit are analyzed to verify the applicability of this technology for use in high and low refresh rate displays.</p>","PeriodicalId":49979,"journal":{"name":"Journal of the Society for Information Display","volume":null,"pages":null},"PeriodicalIF":1.7000,"publicationDate":"2024-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An active-matrix microLED display based on monolithic integration with IGZO backplane\",\"authors\":\"Oliver Durnan, Vikrant Kumar, Reem Alshanbari, Megan Noga, Ioannis Kymissis\",\"doi\":\"10.1002/jsid.1299\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>This paper presents a method of monolithically integrating gallium nitride micrometer-scale light-emitting diodes (microLEDs) with an indium gallium zinc oxide (IGZO) thin-film transistor (TFT) backplane to produce an active-matrix microdisplay. After discussion of the fabrication process, individual LEDs, TFTs, and the integrated system are characterized. Results demonstrate a 32 × 32 pixel, 78.4 PPI microdisplay with luminance exceeding 1500 nits. The dynamic set and hold behaviors of the active-matrix pixel circuit are analyzed to verify the applicability of this technology for use in high and low refresh rate displays.</p>\",\"PeriodicalId\":49979,\"journal\":{\"name\":\"Journal of the Society for Information Display\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.7000,\"publicationDate\":\"2024-05-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of the Society for Information Display\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/jsid.1299\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the Society for Information Display","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/jsid.1299","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

本文介绍了一种将氮化镓微米级发光二极管（microLED）与铟镓锌氧化物（IGZO）薄膜晶体管（TFT）背板单片集成的方法，以生产有源矩阵微型显示器。在讨论了制造工艺之后，对单个 LED、TFT 和集成系统进行了鉴定。结果显示，32 × 32 像素、78.4 PPI 的微型显示器亮度超过 1500 尼特。对有源矩阵像素电路的动态设置和保持行为进行了分析，以验证该技术在高刷新率和低刷新率显示器中的适用性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

An active-matrix microLED display based on monolithic integration with IGZO backplane

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An active-matrix microLED display based on monolithic integration with IGZO backplane

This paper presents a method of monolithically integrating gallium nitride micrometer-scale light-emitting diodes (microLEDs) with an indium gallium zinc oxide (IGZO) thin-film transistor (TFT) backplane to produce an active-matrix microdisplay. After discussion of the fabrication process, individual LEDs, TFTs, and the integrated system are characterized. Results demonstrate a 32 × 32 pixel, 78.4 PPI microdisplay with luminance exceeding 1500 nits. The dynamic set and hold behaviors of the active-matrix pixel circuit are analyzed to verify the applicability of this technology for use in high and low refresh rate displays.

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来源期刊

Journal of the Society for Information Display 工程技术-材料科学：综合

CiteScore

4.80

自引率

8.70%

发文量

审稿时长

3 months

期刊介绍： The Journal of the Society for Information Display publishes original works dealing with the theory and practice of information display. Coverage includes materials, devices and systems; the underlying chemistry, physics, physiology and psychology; measurement techniques, manufacturing technologies; and all aspects of the interaction between equipment and its users. Review articles are also published in all of these areas. Occasional special issues or sections consist of collections of papers on specific topical areas or collections of full length papers based in part on oral or poster presentations given at SID sponsored conferences.