用于气体传感的 ZnS/多孔硅异质结的性能研究

IF 1.2 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Chalcogenide Letters Pub Date : 2024-05-13 DOI:10.15251/cl.2024.214.343

F. B. Mohammed Ameen, M. H. Younus, G. G. Ali

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引用次数: 0

摘要

这项工作研究了 ZnS/多孔硅异质结构的气体传感特性。.通过喷雾热解方法在多孔硅衬底上成功合成了具有高气体传感性能的硫化锌（ZnS）。利用 X 射线衍射 (XRD)、扫描电子显微镜 (SEM)、傅立叶变换光谱 (FTIR) 和光学特性对制备的样品进行了表征。结果表明，当 ZnS 浓度增加时，ZnS/多孔硅异质结构的性能增强。ZnS/Porous silicon 作为气体传感的性能表明，与其他灵敏度相比，ZnS 浓度为 0.5 M、蚀刻时间为 15 分钟时的最大灵敏度为 5.11。基于 ZnS-PSi 异质结的气体传感器具有高灵敏度和快速响应等宝贵特性，可用于紫外光光电探测器。

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Properties investigation of ZnS/porous silicon heterojunction for gas sensing

In this work, the gas sensing properties of ZnS/Porous silicon heterostructures have been investigated. . Zinc sulfide(ZnS) with high gas sensing performance is successfully synthesized over the Porous silicon substrate by the spray pyrolysis method. The properties of the as-prepared samples were characterized X-ray diffraction (XRD), scanning electron microscope (SEM), Fourier transform spectrum (FTIR) and optical properties. The results reveal that the properties of the ZnS/Porous silicon heterostructures enhanced when the when the ZnS concentration is increased. The performance ZnS/Porous silicon as a gas-sensing show that the maximum sensitivity is found to be 5.11 at ZnS concentration of 0.5 M and etching time of 15 min compared to the other sensitivities. The ZnS-PSi heterojunction based gas sensor may be used for UV-light photo-detectors due to a valuable properties such as high sensitivity and fast response.

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来源期刊

Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

1.80

自引率

20.00%

发文量

审稿时长

1 months

期刊介绍： Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.