使用 DVCCTA 的浮动/接地带电受控忆阻器仿真器

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Nidhee Bhuwal, Manoj Kumar Majumder, Deepika Gupta
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引用次数: 0

摘要

在这项工作中,我们设计了一种基于电荷的忆阻器仿真器,它使用了一个有源电流模式元件差分电压电流传输跨导放大器,一个电容器和两个电阻器作为无源元件。重要的是,所提出的电路拓扑结构可通过单个开关改变为接地或浮动配置。此外,通过使用另一个开关,拟议的忆阻器设计可以在增量或减量配置下运行。因此,只需使用两个开关,就能利用相同的电路设计出浮动/接地增量/减量忆阻器。通过施加不同的偏置电压,可以控制挤压磁滞环面积。此外,我们还进行了数学分析,以得出基于二氧化钛的拟议忆阻器仿真器的理论结果。此外,通过改变频率和电容,在 PSPICE 中使用电源电压为 ± 0.9 V 的 180 nm TSMC 技术进行了仿真,以证实理论分析的正确性,从而获得了捏合磁滞环路。所介绍的电路在接地型忆阻器工作频率高达 500 MHz 和浮动型设计工作频率高达 300 MHz 时均能有效工作。为了检查所建议的忆阻器的历史记忆能力,对增量和减量配置都进行了无挥发性测试。此外,还将建议的忆阻器设计应用于自适应学习电路,以证明其在神经形态应用中的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Floating/grounded charged controlled memristor emulator using DVCCTA

Floating/grounded charged controlled memristor emulator using DVCCTA

Floating/grounded charged controlled memristor emulator using DVCCTA

In this work, a charge-based memristor emulator is designed using a single active current mode component Differential Voltage Current Conveyor Transconductance Amplifier with one capacitor and two resistors as passive components. Importantly, the proposed circuit topology can be changed to either grounded or floating configuration using a single switch. Moreover, the proposed memristor design can be operated either in incremental or decremental configuration by using another switch. Therefore, using only two switches, the same circuitry can be utilized to design the floating/grounded incremental/decremental memristor. The pinched hysteresis loop area can be controlled by applying different biasing voltages. Further, the mathematical analysis is performed to drive the theoretical TiO2 based results for the proposed memristor emulator. In addition, simulations confirming the theoretical analysis are conducted in PSPICE using the 180 nm TSMC technology with a supply voltage of ± 0.9 V by varying frequencies and capacitances to obtain a pinched hysteresis loop. The presented circuit performs effectively for frequencies upto 500 MHz while operating with grounded type memristor and 300 MHz with floating type design. To check the ability to remember the history of the proposed memristor, the non-volatility test is performed for both the incremental and decremental configurations. Moreover, the suggested memristor design is applied in an adaptive learning circuit to prove its feasibility in neuromorphic applications.

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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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