基于改进型 T 型截面的低插入损耗小型 IPD 带通滤波器,适用于 5G 应用

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Qi Zhang, Yazi Cao, Gaofeng Wang
{"title":"基于改进型 T 型截面的低插入损耗小型 IPD 带通滤波器,适用于 5G 应用","authors":"Qi Zhang,&nbsp;Yazi Cao,&nbsp;Gaofeng Wang","doi":"10.1002/jnm.3248","DOIUrl":null,"url":null,"abstract":"<p>A miniaturized bandpass filter (BPF) with low insertion loss based on a modified T-section and a grounded transmission-zero resonator is proposed. The novel T-section consists of two resonators, which can achieve the bandpass performance with two transmission zeros (TZs) in the upper band. The grounded transmission-zero resonator can generate an extra transmission zero in the lower band. Therefore, high frequency selectivity can be achieved by the above three transmission zeros near the passband. The proposed BPF can achieve an insertion loss of 0.8 dB and a return loss of 22 dB covering 3.3–4.2 GHz, and the upper-stopband attenuation is better than 20 dB up to 12.5 GHz (3.3<i>f</i><sub>0</sub>). The proposed BPF with a miniaturized size of 1.2 mm × 0.5 mm × 0.3 mm have been fabricated using Si-based integrated passive devices (IPDs) technology and measured by on-wafer probing. The simulated and measured results of the proposed BPF are in reasonably good agreement.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6000,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Miniaturized IPD band pass filter with low insertion loss based on modified T-section for 5G applications\",\"authors\":\"Qi Zhang,&nbsp;Yazi Cao,&nbsp;Gaofeng Wang\",\"doi\":\"10.1002/jnm.3248\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>A miniaturized bandpass filter (BPF) with low insertion loss based on a modified T-section and a grounded transmission-zero resonator is proposed. The novel T-section consists of two resonators, which can achieve the bandpass performance with two transmission zeros (TZs) in the upper band. The grounded transmission-zero resonator can generate an extra transmission zero in the lower band. Therefore, high frequency selectivity can be achieved by the above three transmission zeros near the passband. The proposed BPF can achieve an insertion loss of 0.8 dB and a return loss of 22 dB covering 3.3–4.2 GHz, and the upper-stopband attenuation is better than 20 dB up to 12.5 GHz (3.3<i>f</i><sub>0</sub>). The proposed BPF with a miniaturized size of 1.2 mm × 0.5 mm × 0.3 mm have been fabricated using Si-based integrated passive devices (IPDs) technology and measured by on-wafer probing. The simulated and measured results of the proposed BPF are in reasonably good agreement.</p>\",\"PeriodicalId\":50300,\"journal\":{\"name\":\"International Journal of Numerical Modelling-Electronic Networks Devices and Fields\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2024-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Numerical Modelling-Electronic Networks Devices and Fields\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/jnm.3248\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/jnm.3248","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

本文提出了一种基于改进型 T 型截面和接地透射零谐振器的小型低插入损耗带通滤波器(BPF)。新颖的 T 型截面由两个谐振器组成,可在高频段实现具有两个传输零点(TZ)的带通性能。接地透射零谐振器可以在低频段产生额外的透射零。因此,上述三个传输零点可以在通带附近实现高频选择性。所提出的 BPF 在 3.3-4.2 GHz 频率范围内的插入损耗为 0.8 dB,回波损耗为 22 dB,上频带衰减优于 20 dB,最高可达 12.5 GHz (3.3f0)。利用硅基集成无源器件(IPDs)技术制作了尺寸为 1.2 mm × 0.5 mm × 0.3 mm 的微型 BPF,并通过晶圆探测进行了测量。拟议 BPF 的模拟和测量结果相当吻合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Miniaturized IPD band pass filter with low insertion loss based on modified T-section for 5G applications

A miniaturized bandpass filter (BPF) with low insertion loss based on a modified T-section and a grounded transmission-zero resonator is proposed. The novel T-section consists of two resonators, which can achieve the bandpass performance with two transmission zeros (TZs) in the upper band. The grounded transmission-zero resonator can generate an extra transmission zero in the lower band. Therefore, high frequency selectivity can be achieved by the above three transmission zeros near the passband. The proposed BPF can achieve an insertion loss of 0.8 dB and a return loss of 22 dB covering 3.3–4.2 GHz, and the upper-stopband attenuation is better than 20 dB up to 12.5 GHz (3.3f0). The proposed BPF with a miniaturized size of 1.2 mm × 0.5 mm × 0.3 mm have been fabricated using Si-based integrated passive devices (IPDs) technology and measured by on-wafer probing. The simulated and measured results of the proposed BPF are in reasonably good agreement.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
4.60
自引率
6.20%
发文量
101
审稿时长
>12 weeks
期刊介绍: Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信