Daeyoung Chu, Sanghyun Kang, Gwon Kim, Juho Sung, Jaehyuk Lim, Yejoo Choi, Donghwan Han, Changhwan Shin
{"title":"在基于 Ag/HfO2 的 TS 器件中首次集成镍阻挡层以增强阈值开关特性","authors":"Daeyoung Chu, Sanghyun Kang, Gwon Kim, Juho Sung, Jaehyuk Lim, Yejoo Choi, Donghwan Han, Changhwan Shin","doi":"10.1016/j.mtadv.2024.100492","DOIUrl":null,"url":null,"abstract":"Utilizing Ag/HfO with nickel (Ni) as a barrier layer, a novel threshold switching (TS) device is devised to overcome challenges such as low reliability, high threshold voltage, and high leakage current. Compared against an Ag/Ti/HfO-based TS device, the Ag/Ni/HfO-based TS device exhibits improved electrical characteristics: yield enhancement from 31.7 % to 40.0 %, enhanced endurance from ∼10 cycles to ∼300 cycles, and suppression in off-state current (I) from 1.2 × 10 A to 5.2 × 10 A under a high compliance current (e.g., 10 A). The results obtained through transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), and atomic force microscopy (AFM) support the evidence of those accomplishments. Reducing the effective area of the TS device improves control over erratically generated filaments and the electric field within the switching layer, resulting in enhanced performance such as a reduced threshold voltage (V ∼0.35 V), minimized V variability (∼0.01 V), decreased a threshold current (I, i.e., the leakage current in the off-state before activation, ∼5.2 × 10 A), and maximum conductance (∼5.0 × 10 S) of low-resistance state. These findings suggest that the optimized Ag/Ni/HfO-based TS device can serve as a practical solution for low-power applications.","PeriodicalId":48495,"journal":{"name":"Materials Today Advances","volume":"72 1","pages":""},"PeriodicalIF":8.1000,"publicationDate":"2024-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"First integration of Ni barrier layer for enhanced threshold switching characteristics in Ag/HfO2-based TS device\",\"authors\":\"Daeyoung Chu, Sanghyun Kang, Gwon Kim, Juho Sung, Jaehyuk Lim, Yejoo Choi, Donghwan Han, Changhwan Shin\",\"doi\":\"10.1016/j.mtadv.2024.100492\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Utilizing Ag/HfO with nickel (Ni) as a barrier layer, a novel threshold switching (TS) device is devised to overcome challenges such as low reliability, high threshold voltage, and high leakage current. Compared against an Ag/Ti/HfO-based TS device, the Ag/Ni/HfO-based TS device exhibits improved electrical characteristics: yield enhancement from 31.7 % to 40.0 %, enhanced endurance from ∼10 cycles to ∼300 cycles, and suppression in off-state current (I) from 1.2 × 10 A to 5.2 × 10 A under a high compliance current (e.g., 10 A). The results obtained through transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), and atomic force microscopy (AFM) support the evidence of those accomplishments. Reducing the effective area of the TS device improves control over erratically generated filaments and the electric field within the switching layer, resulting in enhanced performance such as a reduced threshold voltage (V ∼0.35 V), minimized V variability (∼0.01 V), decreased a threshold current (I, i.e., the leakage current in the off-state before activation, ∼5.2 × 10 A), and maximum conductance (∼5.0 × 10 S) of low-resistance state. These findings suggest that the optimized Ag/Ni/HfO-based TS device can serve as a practical solution for low-power applications.\",\"PeriodicalId\":48495,\"journal\":{\"name\":\"Materials Today Advances\",\"volume\":\"72 1\",\"pages\":\"\"},\"PeriodicalIF\":8.1000,\"publicationDate\":\"2024-05-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Today Advances\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1016/j.mtadv.2024.100492\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Today Advances","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1016/j.mtadv.2024.100492","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
First integration of Ni barrier layer for enhanced threshold switching characteristics in Ag/HfO2-based TS device
Utilizing Ag/HfO with nickel (Ni) as a barrier layer, a novel threshold switching (TS) device is devised to overcome challenges such as low reliability, high threshold voltage, and high leakage current. Compared against an Ag/Ti/HfO-based TS device, the Ag/Ni/HfO-based TS device exhibits improved electrical characteristics: yield enhancement from 31.7 % to 40.0 %, enhanced endurance from ∼10 cycles to ∼300 cycles, and suppression in off-state current (I) from 1.2 × 10 A to 5.2 × 10 A under a high compliance current (e.g., 10 A). The results obtained through transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), and atomic force microscopy (AFM) support the evidence of those accomplishments. Reducing the effective area of the TS device improves control over erratically generated filaments and the electric field within the switching layer, resulting in enhanced performance such as a reduced threshold voltage (V ∼0.35 V), minimized V variability (∼0.01 V), decreased a threshold current (I, i.e., the leakage current in the off-state before activation, ∼5.2 × 10 A), and maximum conductance (∼5.0 × 10 S) of low-resistance state. These findings suggest that the optimized Ag/Ni/HfO-based TS device can serve as a practical solution for low-power applications.
期刊介绍:
Materials Today Advances is a multi-disciplinary, open access journal that aims to connect different communities within materials science. It covers all aspects of materials science and related disciplines, including fundamental and applied research. The focus is on studies with broad impact that can cross traditional subject boundaries. The journal welcomes the submissions of articles at the forefront of materials science, advancing the field. It is part of the Materials Today family and offers authors rigorous peer review, rapid decisions, and high visibility.