磁场辅助脉冲激光沉积制备的柱状 BiFeO3 厚膜的表征

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED

Japanese Journal of Applied Physics Pub Date : 2024-05-08 DOI:10.35848/1347-4065/ad3ab9

J. M. Park, M. Okuyama

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引用次数: 0

摘要

利用磁场辅助脉冲激光沉积法在铂/二氧化钛/二氧化硅/硅基底上制备了多晶BiFeO3厚膜。在磁场的限制下，磁流斜入，沉积率高，因此成功获得了厚度为 1.8 μm 的柱状 BiFeO3 厚膜。在柱状 BiFeO3 厚膜中，RT 时获得了饱和 P-E 磁滞环，剩电位极化（Pr）和矫顽力场（Ec）分别为 42 μC cm-2 和 380 kV cm-1。此外，用原子力显微镜测量的压电响应呈蝶形曲线，压电 d33 系数约为 50 pm V-1。

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Characterization of columnar BiFeO3 thick films prepared by magnetic field-assisted pulsed laser deposition

Polycrystalline BiFeO₃ thick films were prepared on Pt/TiO₂/SiO₂/Si substates by using magnetic field-assisted pulsed laser deposition. Columnar BiFeO₃ thick films were successfully obtained with a thickness of 1.8 μm, owing to an oblique incoming flux and high deposition rate by the confinement of the plume under a magnetic field. In the columnar BiFeO₃ thick films, a saturated P-E hysteresis loop was obtained at RT, and the remanent polarization (P _r) and coercive field (E _c) were 42 μC cm⁻² and 380 kV cm⁻¹, respectively. Also, the piezoelectric response measured by atomic force microscopy showed a butterfly-shaped curve, and the piezoelectric d ₃₃ coefficient was about 50 pm V⁻¹.

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来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS