IGBT 模块中键合线疲劳的在线监测方法

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-03-10 DOI:10.1109/JEDS.2024.3399554

Hongtao Liu;Fei Wang;Xiaokang Zhang;Weiyi Xia;Lintao Ren

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引用次数: 0

摘要

IGBT 模块是电力电子转换器的核心部件，其可靠性已受到广泛关注。在各种可靠性问题中，键合线疲劳是一个突出问题。键合线疲劳会改变 IGBT 模块的电气特性，影响 IGBT 的关断过程。因此，它会导致关断过程中集电极-发射极电压尖峰和辅助发射极-发射极电压尖峰发生变化。本文根据集电极-发射极电压尖峰和辅助发射极-发射极电压尖峰，提出利用不受集电极电流和结温影响的 K 因子参数来监测 IGBT 模块的键合导线疲劳。此外，基于 K 因子参数和辅助发射极-发射极电压尖峰，实现了对 IGBT 模块键合线疲劳和结温的监测。这为 IGBT 模块的可靠性评估提供了依据。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An Online Monitoring Method for Bond Wire Fatigue in IGBT Module

IGBT modules are core components of power electronic converters, and their reliability has gained significant attention. Among various reliability concerns, bond wire fatigue is a prominent issue. Bond wire fatigue can alter the electrical characteristics of IGBT modules, affecting the turn-off process of the IGBT. Consequently, it leads to changes in the collector-emitter voltage spike and the auxiliary emitter-emitter voltage spike during the turn-off process. The paper proposes the utilization of the K factor parameter which is not affected by the collector current and junction temperature, based on the collector-emitter voltage spike and the auxiliary emitter-emitter voltage spike, for bond wire fatigue monitoring of IGBT modules. Additionally, the monitoring of bond wire fatigue and junction temperature of IGBT modules was achieved based on the K factor parameter and the auxiliary emitter-emitter voltage spike. This provides a basis for the reliability assessment of IGBT modules.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.