含苯基和叔丁基二甲基硅基的高扭曲梯形寡硅烷

Soichiro Kyushin, Koichi Arai, Ken-ichiro Kanno
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引用次数: 0

摘要

我们合成了含苯基和叔丁基二甲基硅基的双环梯形低聚硅烷的两种立体异构体,并将它们的结构和电子特性与之前报道的全异丙基取代类似物进行了比较。这些新型梯形低聚硅烷具有高度扭曲的结构,两个末端硅-硅键之间的扭曲角度分别为 37.7° 和 39.8°。37.7 和 39.8°。与全异丙基取代的双环梯形低聚硅烷相比,这些化合物的紫外光谱显示出浴盆色移吸收最大值,波长最长。理论计算分析了梯形低聚硅烷的电子特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Highly Twisted Ladder Oligosilanes Bearing Phenyl and tert‐Butyldimethylsilyl Groups
Two stereoisomers of bicyclic ladder oligosilanes bearing phenyl and tert‐butyldimethylsilyl groups were synthesized, and their structures and electronic properties are compared with previously reported perisopropyl‐substituted analog. These novel ladder oligosilanes have highly twisted structures with the twist angles between the two terminal Si–Si bonds of av. 37.7 and 39.8°. The UV spectra of these compounds show bathochromically shifted absorption maxima with the longest wavelength compared with that of the perisopropyl‐substituted bicyclic ladder oligosilane. The electronic properties of the ladder oligosilanes were analyzed by theoretical calculations.
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