用于生物医学应用的源电掺杂 TFET 生物传感器双材料控制栅极腔性能分析

IF 2.7 Q2 PHYSICS, CONDENSED MATTER
Dharmender , Kaushal Kumar Nigam , Piyush Yadav , Vinay Anand Tikkiwal
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引用次数: 0

摘要

与纳米级器件相关的制造复杂性、低灵敏度、检测速度和成本一直是开发无标记生物传感器的重大问题。为了解决这些问题,我们报告了一种用于无标记生物传感器的新型源极电掺杂隧道场效应晶体管(DM-CG-CS-ED-TFET)双材料控制栅腔。在这方面,通过在各自的极性栅电极上分别施加 PG-1 = +1.2 V 和 PG-2 = -1.2 V 的极性栅(PG)偏置电压,诱导了拟议器件中的 n+ 漏极和 p+ 源极区域。与传统的 TFET 相比,这种方法不仅克服了掺杂控制问题,还避免了热预算限制,并最大限度地降低了制造复杂性。为了在该器件中实现生物分子传感,通过选择性地蚀刻极性栅极电介质层的一部分(朝向源侧),在栅极电介质内创建了一个纳米间隙腔。根据载流子浓度曲线、能带图、电场、转移(IDS - VGS)特性、漏极电流(IDS)灵敏度、导通态电流(ION)灵敏度、开关比(ION/IOFF)和亚阈值摆动(SS)灵敏度的变化,对所提出的生物传感器件的性能进行了评估。此外,还根据纳米空腔尺寸、各种填充因子等实际挑战以及立体阻碍产生的阶跃曲线,研究了该器件的灵敏度。此外,还研究了温度对灵敏度的影响。为此,使用 Silvaco ATLAS 设备模拟器研究了各种生物大分子的性能,包括链霉亲和素(k = 2.1)、APTES(k = 3.57)、铁细胞色素 c(k = 4.7)、角蛋白(k = 8)和明胶(k = 12)。模拟结果表明,拟议的生物传感器是生物医学工程中生物传感应用的可行选择。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Performance analysis of dual material control gate cavity on source electrically doped TFET biosensor for biomedical applications

The fabrication complexity, low sensitivity, detection speed, and costs associated with nanoscale devices have been significant concerns in the development of label-free biosensors. To address these issues, we report a novel dual material control gate cavity on source electrically doped tunnel field-effect transistor (DM-CG-CS-ED-TFET) for label-free biosensors. In this regard, the n+ drain and p+ source regions within the proposed device are induced by applying polarity gate (PG) bias voltages of PG-1 = +1.2 V and PG-2 = −1.2 V, respectively, across the respective polarity gate electrodes. This approach not only overcomes doping control issues but also avoids thermal budget constraints and minimizes fabrication complexity when compared to conventional TFET. For biomolecule sensing in the device, a nanogap cavity is created within the gate dielectric by selectively etching a portion of the polarity gate dielectric layer towards the source side. The performance of the proposed biosensor device is evaluated based on the variations in carrier concentration profile, energy band diagram, electric field, transfer (IDS - VGS) characteristics, drain current (IDS) sensitivity, ON-state current (ION) sensitivity, switching ratio (ION/IOFF) and subthreshold swing (SS) sensitivity. The sensitivity of the device is also investigated based on nano-cavity dimensions, practical challenges such as various filling factors, and the step profile generated from the steric hindrance. Moreover, the effect of temperature on sensitivity has also been investigated. For this, various biomolecules including Streptavidin (k = 2.1), APTES (k = 3.57), ferrocytochrome c (k = 4.7), keratin (k = 8) and Gelatin (k = 12), have been investigated for their performance using Silvaco ATLAS device simulator. The simulation results demonstrate that the proposed biosensor is a viable option for biosensing applications in biomedical engineering.

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CiteScore
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