{"title":"通过铁电畴壁工程在合成后调整介电常数","authors":"","doi":"10.1016/j.matt.2024.04.024","DOIUrl":null,"url":null,"abstract":"<div><p>A promising mechanism for achieving colossal dielectric constants involves the use of insulating internal barrier layers, such as insulating domain walls in ferroelectrics. A key advantage of domain walls, compared to other stationary interfaces, is their mobility, offering the potential for post-synthesis adjustment of the dielectric constant. In this work, we demonstrate that altering the domain wall density enables the tuning of the dielectric constant in our template material, i.e., hexagonal ErMnO<sub>3</sub> single crystals. Through microscopy and macroscopic dielectric spectroscopy, we quantify changes in domain wall density and correlated these with changes in dielectric constant within a single sample. Analysis of the dielectric data suggests that the insulating domain walls act as “ideal” capacitors connected in series. Our approach to engineering the domain wall density can be readily extended to other control methods, e.g., electric fields or mechanical stresses, providing a degree of flexibility to <em>in situ</em> tune the dielectric constant.</p></div>","PeriodicalId":388,"journal":{"name":"Matter","volume":null,"pages":null},"PeriodicalIF":17.3000,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2590238524001978/pdfft?md5=ceb1a66a708c98babbfcd169c4a45653&pid=1-s2.0-S2590238524001978-main.pdf","citationCount":"0","resultStr":"{\"title\":\"Post-synthesis tuning of dielectric constant via ferroelectric domain wall engineering\",\"authors\":\"\",\"doi\":\"10.1016/j.matt.2024.04.024\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>A promising mechanism for achieving colossal dielectric constants involves the use of insulating internal barrier layers, such as insulating domain walls in ferroelectrics. A key advantage of domain walls, compared to other stationary interfaces, is their mobility, offering the potential for post-synthesis adjustment of the dielectric constant. In this work, we demonstrate that altering the domain wall density enables the tuning of the dielectric constant in our template material, i.e., hexagonal ErMnO<sub>3</sub> single crystals. Through microscopy and macroscopic dielectric spectroscopy, we quantify changes in domain wall density and correlated these with changes in dielectric constant within a single sample. Analysis of the dielectric data suggests that the insulating domain walls act as “ideal” capacitors connected in series. Our approach to engineering the domain wall density can be readily extended to other control methods, e.g., electric fields or mechanical stresses, providing a degree of flexibility to <em>in situ</em> tune the dielectric constant.</p></div>\",\"PeriodicalId\":388,\"journal\":{\"name\":\"Matter\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":17.3000,\"publicationDate\":\"2024-09-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.sciencedirect.com/science/article/pii/S2590238524001978/pdfft?md5=ceb1a66a708c98babbfcd169c4a45653&pid=1-s2.0-S2590238524001978-main.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Matter\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2590238524001978\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Matter","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2590238524001978","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Post-synthesis tuning of dielectric constant via ferroelectric domain wall engineering
A promising mechanism for achieving colossal dielectric constants involves the use of insulating internal barrier layers, such as insulating domain walls in ferroelectrics. A key advantage of domain walls, compared to other stationary interfaces, is their mobility, offering the potential for post-synthesis adjustment of the dielectric constant. In this work, we demonstrate that altering the domain wall density enables the tuning of the dielectric constant in our template material, i.e., hexagonal ErMnO3 single crystals. Through microscopy and macroscopic dielectric spectroscopy, we quantify changes in domain wall density and correlated these with changes in dielectric constant within a single sample. Analysis of the dielectric data suggests that the insulating domain walls act as “ideal” capacitors connected in series. Our approach to engineering the domain wall density can be readily extended to other control methods, e.g., electric fields or mechanical stresses, providing a degree of flexibility to in situ tune the dielectric constant.
期刊介绍:
Matter, a monthly journal affiliated with Cell, spans the broad field of materials science from nano to macro levels,covering fundamentals to applications. Embracing groundbreaking technologies,it includes full-length research articles,reviews, perspectives,previews, opinions, personnel stories, and general editorial content.
Matter aims to be the primary resource for researchers in academia and industry, inspiring the next generation of materials scientists.