在硅衬底上外延生长具有 IV 族二维层的 Ca(Ge1-xSnx)2

IF 2.3 4区 物理与天体物理 Q3 PHYSICS, APPLIED
Takashi Yoshizaki, Tsukasa Terada, Yuto Uematsu, Takafumi Ishibe and Yoshiaki Nakamura
{"title":"在硅衬底上外延生长具有 IV 族二维层的 Ca(Ge1-xSnx)2","authors":"Takashi Yoshizaki, Tsukasa Terada, Yuto Uematsu, Takafumi Ishibe and Yoshiaki Nakamura","doi":"10.35848/1882-0786/ad3ee2","DOIUrl":null,"url":null,"abstract":"Two-dimensional (2D) material is drawing considerable attention as a promising thermoelectric material. This study establishes the formation method of renewed Ca-intercalated group IV 2D materials, Ca(Ge1−xSnx)2 crystals including germanene-based 2D layers. The solid phase epitaxy allows us to form epitaxial Ca(Ge1−xSnx)2 on Si. Atomic force microscopy reveals that the Ca(Ge1−xSnx)2 has island structures. X-ray diffraction proved the epitaxial growth of the Ca(Ge1−xSnx)2 island structures and the increase of the c-axis lattice constant with Sn content increase. The formation of this renewed intermetallic compound including group IV 2D layer opens an avenue for high performance thermoelectric generator/Si.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"11 1","pages":""},"PeriodicalIF":2.3000,"publicationDate":"2024-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Epitaxial growth of Ca(Ge1−xSnx)2 with group IV 2D layers on Si substrate\",\"authors\":\"Takashi Yoshizaki, Tsukasa Terada, Yuto Uematsu, Takafumi Ishibe and Yoshiaki Nakamura\",\"doi\":\"10.35848/1882-0786/ad3ee2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two-dimensional (2D) material is drawing considerable attention as a promising thermoelectric material. This study establishes the formation method of renewed Ca-intercalated group IV 2D materials, Ca(Ge1−xSnx)2 crystals including germanene-based 2D layers. The solid phase epitaxy allows us to form epitaxial Ca(Ge1−xSnx)2 on Si. Atomic force microscopy reveals that the Ca(Ge1−xSnx)2 has island structures. X-ray diffraction proved the epitaxial growth of the Ca(Ge1−xSnx)2 island structures and the increase of the c-axis lattice constant with Sn content increase. The formation of this renewed intermetallic compound including group IV 2D layer opens an avenue for high performance thermoelectric generator/Si.\",\"PeriodicalId\":8093,\"journal\":{\"name\":\"Applied Physics Express\",\"volume\":\"11 1\",\"pages\":\"\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2024-05-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Express\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.35848/1882-0786/ad3ee2\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Express","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1882-0786/ad3ee2","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0

摘要

二维(2D)材料作为一种前景广阔的热电材料备受关注。本研究确立了包括锗基二维层在内的第四族二维材料--Ca(Ge1-xSnx)2 晶体的形成方法。固相外延使我们能够在硅上形成外延 Ca(Ge1-xSnx)2。原子力显微镜显示 Ca(Ge1-xSnx)2 具有岛状结构。X 射线衍射证明了 Ca(Ge1-xSnx)2 岛状结构的外延生长以及随着 Sn 含量的增加而增加的 c 轴晶格常数。这种包括 IV 族二维层的新型金属间化合物的形成为高性能热电发生器/硅开辟了一条途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Epitaxial growth of Ca(Ge1−xSnx)2 with group IV 2D layers on Si substrate
Two-dimensional (2D) material is drawing considerable attention as a promising thermoelectric material. This study establishes the formation method of renewed Ca-intercalated group IV 2D materials, Ca(Ge1−xSnx)2 crystals including germanene-based 2D layers. The solid phase epitaxy allows us to form epitaxial Ca(Ge1−xSnx)2 on Si. Atomic force microscopy reveals that the Ca(Ge1−xSnx)2 has island structures. X-ray diffraction proved the epitaxial growth of the Ca(Ge1−xSnx)2 island structures and the increase of the c-axis lattice constant with Sn content increase. The formation of this renewed intermetallic compound including group IV 2D layer opens an avenue for high performance thermoelectric generator/Si.
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来源期刊
Applied Physics Express
Applied Physics Express 物理-物理:应用
CiteScore
4.80
自引率
8.70%
发文量
310
审稿时长
1.2 months
期刊介绍: Applied Physics Express (APEX) is a letters journal devoted solely to rapid dissemination of up-to-date and concise reports on new findings in applied physics. The motto of APEX is high scientific quality and prompt publication. APEX is a sister journal of the Japanese Journal of Applied Physics (JJAP) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
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