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引用次数: 0
摘要
摘要 研究表明,当 MOS(金属氧化物半导体)结构同时暴露于辐射和高场注入电子时,部分辐射诱导的正电荷会在与注入电子相互作用时被抑制,表面态密度也会增加。在高场电荷注入模式下运行 MOS 辐射传感器时,必须考虑到这些现象。本文分析了用于 MOS 传感器正电荷辐照后抑制的高场注入模式。结果表明,要湮灭一个空穴(辐射诱导的正电荷),需要向栅极电介质注入 (0.5-2) × 104 个电子;电场的大小对辐射诱导电荷的抑制过程几乎没有影响。
Accumulation and Suppression of Radiation-Induced Charge in MOS Structures
It is shown that when a MOS (metal–oxide–semiconductor) structure is simultaneously exposed to radiation and the high-field injection of electrons, part of the radiation-induced positive charge can be suppressed when interacting with injected electrons, and the density of surface states can increase. These phenomena must be taken into account during the operation of MOS radiation sensors in high-field charge injection modes. High-field injection modes used for postradiation suppression of positive charge in MOS sensors are analyzed. It is established that to annihilate one hole (radiation-induced positive charge), it is necessary to inject (0.5–2) × 104 electrons into the gate dielectric; the magnitude of the electric field has almost no effect on the process of suppression of the radiation-induced charge.
期刊介绍:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.