V. O. Gridchin, S. D. Komarov, I. P. Soshnikov, I. V. Shtrom, R. R. Reznik, N. V. Kryzhanovskaya, G. E. Cirlin
{"title":"分子束外延法生长 InGaN 纳米线：III/V 流量比对结构和光学特性的影响","authors":"V. O. Gridchin, S. D. Komarov, I. P. Soshnikov, I. V. Shtrom, R. R. Reznik, N. V. Kryzhanovskaya, G. E. Cirlin","doi":"10.1134/S1027451024020289","DOIUrl":null,"url":null,"abstract":"<p>In this study, for the first time, the influence of the III/V flux ratio on the structural and optical characteristics of InGaN nanowires grown by plasma-assisted molecular beam epitaxy are investigated. It is found that the formation of InGaN nanowires with a core–shell structure occurs when the III/V flux ratio (taking into account the In-incorporation coefficient) is about 0.9–1.2. At the same time, an increase in the III/V flux ratio from the intermediate growth conditions to metal-rich conditions leads to a decrease in the In content in nanowires from ~45 to ~35%. Samples of this type exhibit photoluminescence at room temperature with a maximum in the range from 600 to 650 nm. A further increase in the III/V flux ratio to ~1.3 or its decrease to ~0.4 lead to the formation of merged nanocolumnar layers with a low In content. The results obtained may be of interest for studying the growth processes of InGaN nanowires and creating RGB light-emitting devices based on them.</p>","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"18 2","pages":"408 - 412"},"PeriodicalIF":0.5000,"publicationDate":"2024-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"On the Growth of InGaN Nanowires by Molecular-Beam Epitaxy: Influence of the III/V Flux Ratio on the Structural and Optical Properties\",\"authors\":\"V. O. Gridchin, S. D. Komarov, I. P. Soshnikov, I. V. Shtrom, R. R. Reznik, N. V. Kryzhanovskaya, G. E. Cirlin\",\"doi\":\"10.1134/S1027451024020289\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>In this study, for the first time, the influence of the III/V flux ratio on the structural and optical characteristics of InGaN nanowires grown by plasma-assisted molecular beam epitaxy are investigated. It is found that the formation of InGaN nanowires with a core–shell structure occurs when the III/V flux ratio (taking into account the In-incorporation coefficient) is about 0.9–1.2. At the same time, an increase in the III/V flux ratio from the intermediate growth conditions to metal-rich conditions leads to a decrease in the In content in nanowires from ~45 to ~35%. Samples of this type exhibit photoluminescence at room temperature with a maximum in the range from 600 to 650 nm. A further increase in the III/V flux ratio to ~1.3 or its decrease to ~0.4 lead to the formation of merged nanocolumnar layers with a low In content. The results obtained may be of interest for studying the growth processes of InGaN nanowires and creating RGB light-emitting devices based on them.</p>\",\"PeriodicalId\":671,\"journal\":{\"name\":\"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques\",\"volume\":\"18 2\",\"pages\":\"408 - 412\"},\"PeriodicalIF\":0.5000,\"publicationDate\":\"2024-05-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S1027451024020289\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.1134/S1027451024020289","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
On the Growth of InGaN Nanowires by Molecular-Beam Epitaxy: Influence of the III/V Flux Ratio on the Structural and Optical Properties
In this study, for the first time, the influence of the III/V flux ratio on the structural and optical characteristics of InGaN nanowires grown by plasma-assisted molecular beam epitaxy are investigated. It is found that the formation of InGaN nanowires with a core–shell structure occurs when the III/V flux ratio (taking into account the In-incorporation coefficient) is about 0.9–1.2. At the same time, an increase in the III/V flux ratio from the intermediate growth conditions to metal-rich conditions leads to a decrease in the In content in nanowires from ~45 to ~35%. Samples of this type exhibit photoluminescence at room temperature with a maximum in the range from 600 to 650 nm. A further increase in the III/V flux ratio to ~1.3 or its decrease to ~0.4 lead to the formation of merged nanocolumnar layers with a low In content. The results obtained may be of interest for studying the growth processes of InGaN nanowires and creating RGB light-emitting devices based on them.
期刊介绍：
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.
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