硅中快离子轨道附近的电子分布

IF 0.5 Q4 PHYSICS, CONDENSED MATTER
N. V. Novikov, N. G. Chechenin, A. A. Shirokova
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引用次数: 0

摘要

摘要 在本文中,我们提出了一个描述快离子轨道附近电子分布的模型。考虑到每条轨迹的统计权重,建立了快速电子通量对时间、层深度和径向变量的依赖关系模型。研究发现,电子通量分布中的脉冲持续时间为几分之一秒,而发生快速电子传输的圆柱形区域的径向尺寸达到几十埃。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Electron Distribution Near the Fast-Ion Track in Silicon

Electron Distribution Near the Fast-Ion Track in Silicon

Electron Distribution Near the Fast-Ion Track in Silicon

In this paper, we propose a model to describe the distribution of electrons near the track of a fast ion. The dependence of the fast-electron flux on time, layer depth, and radial variable is modeled taking into account the statistical weight of each trajectory. The pulse duration in the electron-flux distribution was found to be fractions of ps while the radial size of the cylindrical region, where the transport of fast electrons occurs, reaches tens of angstroms.

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来源期刊
CiteScore
0.90
自引率
25.00%
发文量
144
审稿时长
3-8 weeks
期刊介绍: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.
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