评估含锂闪烁体的淬火特性

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED

Japanese Journal of Applied Physics Pub Date : 2024-05-01 DOI:10.35848/1347-4065/ad39bd

Kenichi Watanabe, Yuya Oshima, Nobuhiro Shigyo and Yuho Hirata

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引用次数: 0

摘要

淬灭效应是指具有高线性能量转移的高能粒子（如高能离子）在闪烁体中沉积能量时闪烁效率降低的现象。从区分中子闪烁体中的中子和伽马射线的角度来看，评估淬灭效应至关重要，因为中子反应产生的高能离子是用来探测中子的。利用蒙特卡罗模拟代码 PHITS 中的用户自定义子程序，我们演示了从含锂闪烁体中获得的脉冲高度谱的计算，其中淬灭效应是根据伯克斯公式考虑的。通过比较实验脉冲高度光谱和模拟结果（考虑了单能量伽马射线形成的中子峰和康普顿边的实验展宽），我们确定了锂玻璃、Ce:LiCaAlF6 和 Eu:LiCaAlF6 闪烁体的 Birks 公式中的淬火系数。

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Evaluation of quenching characteristics of Li-containing scintillators

The quenching effect is a phenomenon in which the scintillation efficiency decreases when energetic particles with high linear energy transfer, such as high-energy ions, deposit energy within the scintillator. From the viewpoint of discriminating between neutrons and gamma rays in the neutron scintillator, evaluating the quenching effect is crucial because the high-energy ions produced by neutron reactions are used to detect neutrons. Using the user-defined subroutine in the Monte Carlo simulation code PHITS, we demonstrated the calculation of the pulse height spectra obtained from Li-containing scintillators, in which the quenching effect is considered based on the Birks’ formula. By comparing the experimental pulse height spectra with simulation results, which consider the experimental broadening, for the neutron peak and Compton edge formed by mono-energetic gamma rays, we determined the quenching coefficient in the Birks’ formula for Li glass, Ce:LiCaAlF6 and Eu:LiCaAlF6 scintillators.

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来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS