{"title":"钆铝硅(GdAlSi)和钐铝锗(SmAlGe)的磁性和电气传输特性","authors":"Jing Gong, Huan Wang, Xiao Ma, Xiangyu Zeng, Junfa Lin, Kun Han, Yiting Wang, Tianlong Xia","doi":"10.1088/1674-1056/ad41ba","DOIUrl":null,"url":null,"abstract":"\n In this work, we conduct a detailed examination of the magnetic and electrical transport properties in GdAlSi and SmAlGe crystals, which possess a LaPtSi-type structure (space group I41\n md). The magnetic susceptibility data unambiguously reveal magnetic ordering below a characteristic transition temperature (T\n N\n ). For GdAlSi, a hysteresis loop is observed in the magnetization and magnetoresistance curves within the ab plane when the magnetic field is applied below T\n N\n , which is around 32 K. Notable specific heat anomalies are detected at 32 K for GdAlSi and 6 K for SmAlGe, confirming the occurrence of magnetic transitions. Besides, the extracted magnetic entropy at high temperatures is consistent with the theoretical value of Rln(2J+1) for J = 7/2 in Gd3+ and J = 5/2 in Sm3+, respectively. SmAlGe also exhibits Schottky-like specific heat contributions. Additionally, both GdAlSi and SmAlGe exhibit positive magnetoresistance and a normal Hall effect.","PeriodicalId":10253,"journal":{"name":"Chinese Physics B","volume":null,"pages":null},"PeriodicalIF":1.5000,"publicationDate":"2024-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Magnetic and electrical transport properties in GdAlSi and SmAlGe\",\"authors\":\"Jing Gong, Huan Wang, Xiao Ma, Xiangyu Zeng, Junfa Lin, Kun Han, Yiting Wang, Tianlong Xia\",\"doi\":\"10.1088/1674-1056/ad41ba\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n In this work, we conduct a detailed examination of the magnetic and electrical transport properties in GdAlSi and SmAlGe crystals, which possess a LaPtSi-type structure (space group I41\\n md). The magnetic susceptibility data unambiguously reveal magnetic ordering below a characteristic transition temperature (T\\n N\\n ). For GdAlSi, a hysteresis loop is observed in the magnetization and magnetoresistance curves within the ab plane when the magnetic field is applied below T\\n N\\n , which is around 32 K. Notable specific heat anomalies are detected at 32 K for GdAlSi and 6 K for SmAlGe, confirming the occurrence of magnetic transitions. Besides, the extracted magnetic entropy at high temperatures is consistent with the theoretical value of Rln(2J+1) for J = 7/2 in Gd3+ and J = 5/2 in Sm3+, respectively. SmAlGe also exhibits Schottky-like specific heat contributions. Additionally, both GdAlSi and SmAlGe exhibit positive magnetoresistance and a normal Hall effect.\",\"PeriodicalId\":10253,\"journal\":{\"name\":\"Chinese Physics B\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2024-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Chinese Physics B\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1088/1674-1056/ad41ba\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chinese Physics B","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1088/1674-1056/ad41ba","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
Magnetic and electrical transport properties in GdAlSi and SmAlGe
In this work, we conduct a detailed examination of the magnetic and electrical transport properties in GdAlSi and SmAlGe crystals, which possess a LaPtSi-type structure (space group I41
md). The magnetic susceptibility data unambiguously reveal magnetic ordering below a characteristic transition temperature (T
N
). For GdAlSi, a hysteresis loop is observed in the magnetization and magnetoresistance curves within the ab plane when the magnetic field is applied below T
N
, which is around 32 K. Notable specific heat anomalies are detected at 32 K for GdAlSi and 6 K for SmAlGe, confirming the occurrence of magnetic transitions. Besides, the extracted magnetic entropy at high temperatures is consistent with the theoretical value of Rln(2J+1) for J = 7/2 in Gd3+ and J = 5/2 in Sm3+, respectively. SmAlGe also exhibits Schottky-like specific heat contributions. Additionally, both GdAlSi and SmAlGe exhibit positive magnetoresistance and a normal Hall effect.
期刊介绍:
Chinese Physics B is an international journal covering the latest developments and achievements in all branches of physics worldwide (with the exception of nuclear physics and physics of elementary particles and fields, which is covered by Chinese Physics C). It publishes original research papers and rapid communications reflecting creative and innovative achievements across the field of physics, as well as review articles covering important accomplishments in the frontiers of physics.
Subject coverage includes:
Condensed matter physics and the physics of materials
Atomic, molecular and optical physics
Statistical, nonlinear and soft matter physics
Plasma physics
Interdisciplinary physics.