Ryo Takei, Masashi Suzuki, S. Kakio, Yasushi Yamamoto
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引用次数: 0
摘要
理论研究了纵向泄漏表面声波(LLSAW)在由 X 切面氧化铌锂(LN)薄板和 4H-SiC 支撑基板组成的粘合结构上的传播和共振特性。在 LN 薄板厚度为 h 时,LLSAW 相速度比 4H-SiC 的体剪切波(7126 m/s)慢,此时可获得具有高 Q 因子的强 LLSAW 响应;在波长为 h Al/λ = 0.06-0.07 和 h/λ = 0.30-0.40 的归一化 Al 薄膜厚度条件下,可获得 9-10% 的分数带宽 (FBW)。此外,即使 h/λ 的相位速度比 4H-SiC 的体剪切波更快,也能获得强烈的 LLSAW 响应,而不会因 LLSAW 高阶模而产生杂散响应。最后,提取了 h Al/λ = 0.031 和 h/λ = 0.19,得到了 7800 m/s 的相位速度、高 Q 因子和 7.6% 的 FBW。
Analysis of propagation and resonance properties of longitudinal leaky surface acoustic wave on LiNbO3/SiC bonded structure
The propagation and resonance properties of longitudinal leaky surface acoustic waves (LLSAW) on a bonded structure comprising an X-cut LiNbO3 (LN) thin plate and a 4H-SiC support substrate are theoretically investigated. The strong LLSAW responses with high Q factors were obtained at the LN thin-plate thickness h where the LLSAW phase velocity was slower than the bulk shear wave of 4H-SiC of 7126 m/s, and a fractional bandwidth (FBW) of 9–10% was obtained for the normalized Al film thickness by wavelength h
Al/λ = 0.06–0.07 and h/λ = 0.30–0.40. Moreover, even at h/λ with a faster phase velocity than the bulk shear wave of 4H-SiC, the strong LLSAW responses without spurious response owing to the LLSAW higher-order mode were obtained. Finally, h
Al/λ = 0.031 and h/λ = 0.19 were extracted to obtain a phase velocity of 7800 m/s, high Q factors, and FBW of 7.6%.
期刊介绍:
The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields:
• Semiconductors, dielectrics, and organic materials
• Photonics, quantum electronics, optics, and spectroscopy
• Spintronics, superconductivity, and strongly correlated materials
• Device physics including quantum information processing
• Physics-based circuits and systems
• Nanoscale science and technology
• Crystal growth, surfaces, interfaces, thin films, and bulk materials
• Plasmas, applied atomic and molecular physics, and applied nuclear physics
• Device processing, fabrication and measurement technologies, and instrumentation
• Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS