Wei Si , Ning Wang , Yuan Zong , Gance Dai , Ling Zhao , Zhong Xin , Guangjing Jiang
{"title":"西门子还原炉中影响多晶硅棒温度均匀性的传热机制研究","authors":"Wei Si , Ning Wang , Yuan Zong , Gance Dai , Ling Zhao , Zhong Xin , Guangjing Jiang","doi":"10.1016/j.jcrysgro.2024.127693","DOIUrl":null,"url":null,"abstract":"<div><p>The temperature homogeneity at polysilicon rods significantly affects the uniformity growth of the polysilicon rod and the product quality in reduction furnace. The heat transfer phenomena on the rod surface includes electric heating, radiation heat transfer, convection heat transfer, heat conduction and reaction heat. In this paper, a representative configuration (RC) of heat transfer model was selected from a “honeycomb” industrial furnace. The flow patterns with different outlets have been numerically investigated and the dependency of surface temperature distribution on the inlet velocity as well as the geometric parameters has been investigated. <span><math><mrow><mi>Gr</mi><mo>/</mo><msubsup><mrow><mi>Re</mi></mrow><mrow><mi>d</mi></mrow><mn>2</mn></msubsup></mrow></math></span> = 100 is set as the transition point determining the natural convection and mixed convection heat transfer. The results indicated that the axial temperature difference at the rod surface has close relationship with the complicated convection heat transfer. With rods growth, the main difference of local heat loss is caused by radiation rather than convection heat transfer.</p></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":null,"pages":null},"PeriodicalIF":1.7000,"publicationDate":"2024-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of heat transfer mechanism affecting temperature homogeneity at polysilicon rods in a Siemens reduction furnace\",\"authors\":\"Wei Si , Ning Wang , Yuan Zong , Gance Dai , Ling Zhao , Zhong Xin , Guangjing Jiang\",\"doi\":\"10.1016/j.jcrysgro.2024.127693\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The temperature homogeneity at polysilicon rods significantly affects the uniformity growth of the polysilicon rod and the product quality in reduction furnace. The heat transfer phenomena on the rod surface includes electric heating, radiation heat transfer, convection heat transfer, heat conduction and reaction heat. In this paper, a representative configuration (RC) of heat transfer model was selected from a “honeycomb” industrial furnace. The flow patterns with different outlets have been numerically investigated and the dependency of surface temperature distribution on the inlet velocity as well as the geometric parameters has been investigated. <span><math><mrow><mi>Gr</mi><mo>/</mo><msubsup><mrow><mi>Re</mi></mrow><mrow><mi>d</mi></mrow><mn>2</mn></msubsup></mrow></math></span> = 100 is set as the transition point determining the natural convection and mixed convection heat transfer. The results indicated that the axial temperature difference at the rod surface has close relationship with the complicated convection heat transfer. With rods growth, the main difference of local heat loss is caused by radiation rather than convection heat transfer.</p></div>\",\"PeriodicalId\":353,\"journal\":{\"name\":\"Journal of Crystal Growth\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.7000,\"publicationDate\":\"2024-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Crystal Growth\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0022024824001283\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024824001283","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
Investigation of heat transfer mechanism affecting temperature homogeneity at polysilicon rods in a Siemens reduction furnace
The temperature homogeneity at polysilicon rods significantly affects the uniformity growth of the polysilicon rod and the product quality in reduction furnace. The heat transfer phenomena on the rod surface includes electric heating, radiation heat transfer, convection heat transfer, heat conduction and reaction heat. In this paper, a representative configuration (RC) of heat transfer model was selected from a “honeycomb” industrial furnace. The flow patterns with different outlets have been numerically investigated and the dependency of surface temperature distribution on the inlet velocity as well as the geometric parameters has been investigated. = 100 is set as the transition point determining the natural convection and mixed convection heat transfer. The results indicated that the axial temperature difference at the rod surface has close relationship with the complicated convection heat transfer. With rods growth, the main difference of local heat loss is caused by radiation rather than convection heat transfer.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.