利用磁光克尔效应研究基于 MnBi2Te4 的系统中的表面磁性

IF 0.6 4区材料科学 Q4 CRYSTALLOGRAPHY

Crystallography Reports Pub Date : 2024-04-16 DOI:10.1134/S1063774523601296

D. A. Glazkova, D. A. Estyunin, A. S. Tarasov, N. N. Kosyrev, V. A. Komarov, G. S. Patrin, V. A. Golyashov, O. E. Tereshchenko, K. A. Kokh, A. V. Koroleva, A. M. Shikin

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引用次数: 0

摘要

摘要MnBi2Te4、Mn(Bi,Sb)2Te4 和 MnBi2Te4(Bi2Te3)m (m ≥ 1) 被认为是磁性拓扑绝缘体。要在纳米电子器件中成功应用这些材料，就必须全面研究它们的电子结构和磁性能与 Bi/Sb 原子比和 Bi2Te3 块数 m 的关系。我们利用磁光克尔效应研究了 MnBi2Te4、MnBi4Te7 和 Mn(Bi\(_{{1-x}}\)Sbx)2Te4 化合物（x = 0.43 和 0.32）表面的磁特性。研究表明，MnBi4Te7 和 Mn(Bi,Sb)2Te4 表面和内部的磁跃迁温度差别很大。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Investigation of Surface Magnetism in Systems Based on MnBi2Te4 Using the Magneto-Optical Kerr Effect

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Investigation of Surface Magnetism in Systems Based on MnBi2Te4 Using the Magneto-Optical Kerr Effect

MnBi₂Te₄, Mn(Bi,Sb)₂Te₄, and MnBi₂Te₄(Bi₂Te₃)_m (m ≥ 1) are assigned to magnetic topological insulators. Successful application of these materials in nanoelectronic devices calls for comprehensive investigation of their electronic structure and magnetic properties in dependence of the Bi/Sb atomic ratio and the number m of Bi₂Te₃ blocks. The magnetic properties of the surface of MnBi₂Te₄, MnBi₄Te₇, and Mn(Bi\(_{{1-x}}\)Sb_x)₂Te₄ compounds (x = 0.43 and 0.32) have been studied using the magneto-optical Kerr effect. It is shown that the temperatures of magnetic transitions on the surface and in the bulk of MnBi₄Te₇ and Mn(Bi, Sb)₂Te₄ differ significantly.

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来源期刊

Crystallography Reports 化学-晶体学

CiteScore

1.10

自引率

28.60%

发文量

审稿时长

4-8 weeks

期刊介绍： Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.