硅基氮化铝薄膜的结构和导电性

IF 0.6 4区材料科学 Q4 CRYSTALLOGRAPHY

Crystallography Reports Pub Date : 2024-04-16 DOI:10.1134/s1063774523601260

N. V. Bazlov, O. F. Vyvenko, N. V. Niyazova, I. M. Kotina, M. V. Trushin, A. S. Bondarenko

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引用次数: 0

摘要

摘要通过反应磁控溅射法在 n-硅（100）基底上合成了氮化铝薄膜。获得的氮化铝层厚度从 2 纳米到 150 纳米不等，从而建立了薄膜结构与导电性之间的相关性。电子显微镜显示，在远离基底表面时，薄膜的非晶结构会转变为纳米晶结构。厚度低于 20 纳米的薄膜具有很高的电导率：高达 10 (Ω cm)-1；随着厚度的增加，电导率降至 10-7 (Ω cm)-1。氮化铝薄层的高电导率被认为是由于内置于无定形基质中的晶粒边界密度高所致。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Structure and Electrical Conductivity of Thin AlN Films on Si

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Structure and Electrical Conductivity of Thin AlN Films on Si

Abstract

Aluminum nitride films have been synthesized by reactive magnetron sputtering on n-Si(100) substrates. AlN layers with thicknesses from 2 to 150 nm were obtained to establish a correlation between the structure of the films and their electrical conductivity. Electron microscopy revealed that the amorphous structure of the films passes to nanocrystalline one while moving away from the substrate surface. Films with thicknesses below 20 nm had a high conductivity: up to 10 (Ω cm)^–1; with an increase in thickness the conductivity dropped to 10^–7 (Ω cm)^–1. The high conductivity of thin AlN layers is believed to be due to the high density of the boundaries of grains built-in into amorphous matrix.

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来源期刊

Crystallography Reports 化学-晶体学

CiteScore

1.10

自引率

28.60%

发文量

审稿时长

4-8 weeks

期刊介绍： Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.