{"title":"用于低功率锁相环应用的基于设计的抗辐射压控振荡器","authors":"Rachana Ahirwar, Manisha Pattanaik, Pankaj Srivastava","doi":"10.1007/s10836-024-06113-x","DOIUrl":null,"url":null,"abstract":"<p>A radiation-hardened-by-design (RHBD) current-starved-ring voltage-controlled oscillator (CSR-VCO) design is proposed based on the separation of gate input technique to mitigate single event effects (SEEs) for phase-locked loop (PLL) implementation. A double-exponential (DE) current model is used to analyze the effect of single event transient (SET) at the output of the proposed RHBD CSR-VCO. The proposed RHBD CSR-VCO is implemented in United Microelectronics Corporation (UMC) 65 nm CMOS technology and a 71.6% improvement is achieved in phase displacement as compared to conventional VCO. The oscillation frequency of 1.75 GHz is obtained for the proposed RHBD CSR-VCO with a tuning range from 0.40 GHz to 2.23 GHz and power dissipation of 1.368 mW. The proposed RHBD CSR-VCO is protected against radiation with deposited charges up to 1050 fC and achieved a higher figure-of-merit (FOM) when compared to the recently reported VCOs and PLLs. This shows that even in a radiation-prone environment, the RHBD PLL can achieve excellent performance and be employed successfully in low-power, high-speed communication applications.</p>","PeriodicalId":501485,"journal":{"name":"Journal of Electronic Testing","volume":"57 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Radiation Hardened by Design-based Voltage Controlled Oscillator for Low Power Phase Locked Loop Application\",\"authors\":\"Rachana Ahirwar, Manisha Pattanaik, Pankaj Srivastava\",\"doi\":\"10.1007/s10836-024-06113-x\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>A radiation-hardened-by-design (RHBD) current-starved-ring voltage-controlled oscillator (CSR-VCO) design is proposed based on the separation of gate input technique to mitigate single event effects (SEEs) for phase-locked loop (PLL) implementation. A double-exponential (DE) current model is used to analyze the effect of single event transient (SET) at the output of the proposed RHBD CSR-VCO. The proposed RHBD CSR-VCO is implemented in United Microelectronics Corporation (UMC) 65 nm CMOS technology and a 71.6% improvement is achieved in phase displacement as compared to conventional VCO. The oscillation frequency of 1.75 GHz is obtained for the proposed RHBD CSR-VCO with a tuning range from 0.40 GHz to 2.23 GHz and power dissipation of 1.368 mW. The proposed RHBD CSR-VCO is protected against radiation with deposited charges up to 1050 fC and achieved a higher figure-of-merit (FOM) when compared to the recently reported VCOs and PLLs. This shows that even in a radiation-prone environment, the RHBD PLL can achieve excellent performance and be employed successfully in low-power, high-speed communication applications.</p>\",\"PeriodicalId\":501485,\"journal\":{\"name\":\"Journal of Electronic Testing\",\"volume\":\"57 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-04-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Electronic Testing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1007/s10836-024-06113-x\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1007/s10836-024-06113-x","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Radiation Hardened by Design-based Voltage Controlled Oscillator for Low Power Phase Locked Loop Application
A radiation-hardened-by-design (RHBD) current-starved-ring voltage-controlled oscillator (CSR-VCO) design is proposed based on the separation of gate input technique to mitigate single event effects (SEEs) for phase-locked loop (PLL) implementation. A double-exponential (DE) current model is used to analyze the effect of single event transient (SET) at the output of the proposed RHBD CSR-VCO. The proposed RHBD CSR-VCO is implemented in United Microelectronics Corporation (UMC) 65 nm CMOS technology and a 71.6% improvement is achieved in phase displacement as compared to conventional VCO. The oscillation frequency of 1.75 GHz is obtained for the proposed RHBD CSR-VCO with a tuning range from 0.40 GHz to 2.23 GHz and power dissipation of 1.368 mW. The proposed RHBD CSR-VCO is protected against radiation with deposited charges up to 1050 fC and achieved a higher figure-of-merit (FOM) when compared to the recently reported VCOs and PLLs. This shows that even in a radiation-prone environment, the RHBD PLL can achieve excellent performance and be employed successfully in low-power, high-speed communication applications.