{"title":"间隔物对 MoTe2/MoSe2 和 MoTe2/WSe2 异质结构双栅 MOSFET 性能的影响","authors":"M. Muthu Manjula, R. Ramesh","doi":"10.1016/j.micrna.2024.207846","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, the spacer effects (both low and high-k) on the dc and noise characteristics of heterostructure molybdenum ditelluride (MoTe<sub>2</sub>/MoSe<sub>2</sub> and MoTe<sub>2</sub>/WSe<sub>2</sub>) double gate (DG) MOSFET is analyzed. To study the device characteristics, a hybrid methodology that uses both QuantumWise ATK and Sentaurus TCAD tool is used. The performance metrics of the device such as on-current (I<sub>on</sub>), I<sub>on</sub>/I<sub>off</sub> ratio, subthreshold swing (SS), threshold voltage are obtained. The noise performance of the device is also studied (with/without spacer) using impedance field method. Noise parameters such as noise power spectral density (S<sub>ID</sub>) and noise figure (function of both frequency and bias) has also been simulated and noise components such as G-R noise, flicker noise and white noise are obtained. The simulation results shows that the introduction of spacer material enhances the dc performance of the device and influences its noise characteristics.</p></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":null,"pages":null},"PeriodicalIF":2.7000,"publicationDate":"2024-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Spacer effects on the performance of MoTe2/MoSe2 and MoTe2/WSe2 heterostructure double gate MOSFET\",\"authors\":\"M. Muthu Manjula, R. Ramesh\",\"doi\":\"10.1016/j.micrna.2024.207846\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this work, the spacer effects (both low and high-k) on the dc and noise characteristics of heterostructure molybdenum ditelluride (MoTe<sub>2</sub>/MoSe<sub>2</sub> and MoTe<sub>2</sub>/WSe<sub>2</sub>) double gate (DG) MOSFET is analyzed. To study the device characteristics, a hybrid methodology that uses both QuantumWise ATK and Sentaurus TCAD tool is used. The performance metrics of the device such as on-current (I<sub>on</sub>), I<sub>on</sub>/I<sub>off</sub> ratio, subthreshold swing (SS), threshold voltage are obtained. The noise performance of the device is also studied (with/without spacer) using impedance field method. Noise parameters such as noise power spectral density (S<sub>ID</sub>) and noise figure (function of both frequency and bias) has also been simulated and noise components such as G-R noise, flicker noise and white noise are obtained. The simulation results shows that the introduction of spacer material enhances the dc performance of the device and influences its noise characteristics.</p></div>\",\"PeriodicalId\":100923,\"journal\":{\"name\":\"Micro and Nanostructures\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2024-04-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Micro and Nanostructures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2773012324000955\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nanostructures","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773012324000955","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Spacer effects on the performance of MoTe2/MoSe2 and MoTe2/WSe2 heterostructure double gate MOSFET
In this work, the spacer effects (both low and high-k) on the dc and noise characteristics of heterostructure molybdenum ditelluride (MoTe2/MoSe2 and MoTe2/WSe2) double gate (DG) MOSFET is analyzed. To study the device characteristics, a hybrid methodology that uses both QuantumWise ATK and Sentaurus TCAD tool is used. The performance metrics of the device such as on-current (Ion), Ion/Ioff ratio, subthreshold swing (SS), threshold voltage are obtained. The noise performance of the device is also studied (with/without spacer) using impedance field method. Noise parameters such as noise power spectral density (SID) and noise figure (function of both frequency and bias) has also been simulated and noise components such as G-R noise, flicker noise and white noise are obtained. The simulation results shows that the introduction of spacer material enhances the dc performance of the device and influences its noise characteristics.
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