LEC-GaSb 单晶中的面效应研究

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-04-14 DOI:10.1016/j.jcrysgro.2024.127706

Weimin Dong , Jun Jiang , Qianwen Peng , Chengao Liu , Deliang Chu , Biwen Duan , Henghao Feng , Jin Yang , Wei Guo , Jincheng Kong , Jun Zhao

{"title":"LEC-GaSb 单晶中的面效应研究","authors":"Weimin Dong , Jun Jiang , Qianwen Peng , Chengao Liu , Deliang Chu , Biwen Duan , Henghao Feng , Jin Yang , Wei Guo , Jincheng Kong , Jun Zhao","doi":"10.1016/j.jcrysgro.2024.127706","DOIUrl":null,"url":null,"abstract":"<div><p>The “facet effect” had an important impact on the growth and quality of III-V semiconductor crystals. Herein, Te-doped 〈111〉 and 〈100〉 GaSb single crystals were grown by the liquid-encapsulated Czochralski (LEC) method. The theoretical causes of the central facets of 〈111〉 GaSb and the edge facets of 〈100〉 GaSb were studied in detail. The Te component segregation, electrical parameter changes, infrared transmittance differences, and epitaxial film defects caused by the “facet effect” were comprehensively analyzed. The influence of the shoulder angle on the edge facets of 〈100〉 GaSb and the size differences of edge facets between the Ga-face and Sb-face were studied.</p></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":null,"pages":null},"PeriodicalIF":1.7000,"publicationDate":"2024-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study on the facet effect in LEC-GaSb single crystals\",\"authors\":\"Weimin Dong , Jun Jiang , Qianwen Peng , Chengao Liu , Deliang Chu , Biwen Duan , Henghao Feng , Jin Yang , Wei Guo , Jincheng Kong , Jun Zhao\",\"doi\":\"10.1016/j.jcrysgro.2024.127706\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The “facet effect” had an important impact on the growth and quality of III-V semiconductor crystals. Herein, Te-doped 〈111〉 and 〈100〉 GaSb single crystals were grown by the liquid-encapsulated Czochralski (LEC) method. The theoretical causes of the central facets of 〈111〉 GaSb and the edge facets of 〈100〉 GaSb were studied in detail. The Te component segregation, electrical parameter changes, infrared transmittance differences, and epitaxial film defects caused by the “facet effect” were comprehensively analyzed. The influence of the shoulder angle on the edge facets of 〈100〉 GaSb and the size differences of edge facets between the Ga-face and Sb-face were studied.</p></div>\",\"PeriodicalId\":353,\"journal\":{\"name\":\"Journal of Crystal Growth\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.7000,\"publicationDate\":\"2024-04-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Crystal Growth\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0022024824001416\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024824001416","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}

引用次数: 0

摘要

面效应 "对 III-V 族半导体晶体的生长和质量有重要影响。在此，我们采用液态包封佐赫拉尔斯基（LEC）方法生长了掺Te的〈1 1 1〉和〈1 0 0〉GaSb单晶。详细研究了〈1 1 1〉GaSb中心面和〈1 0 0〉GaSb边缘面的理论成因。全面分析了 "切面效应 "引起的 Te 成分偏析、电参数变化、红外透射率差异和外延薄膜缺陷。研究了肩角对〈1 0 0〉GaSb 边缘刻面的影响以及 Ga 面和 Sb 面边缘刻面的尺寸差异。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Study on the facet effect in LEC-GaSb single crystals

The “facet effect” had an important impact on the growth and quality of III-V semiconductor crystals. Herein, Te-doped 〈1 1 1〉 and 〈1 0 0〉 GaSb single crystals were grown by the liquid-encapsulated Czochralski (LEC) method. The theoretical causes of the central facets of 〈1 1 1〉 GaSb and the edge facets of 〈1 0 0〉 GaSb were studied in detail. The Te component segregation, electrical parameter changes, infrared transmittance differences, and epitaxial film defects caused by the “facet effect” were comprehensively analyzed. The influence of the shoulder angle on the edge facets of 〈1 0 0〉 GaSb and the size differences of edge facets between the Ga-face and Sb-face were studied.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.