{"title":"通过 GPVDM 仿真软件对以 AgSCN 为 HTL 的无机无铅 Ag2BiI5 鲁道夫基太阳能电池进行器件建模和性能分析","authors":"Samaneh Mozaffari","doi":"10.1007/s10825-024-02157-6","DOIUrl":null,"url":null,"abstract":"<div><p>The unprecedented photo-electronic conversion efficiency (PCE) of organic–inorganic lead perovskite solar cells (PSCs), over 25% within a span of 10 years, makes them an optimistic solution for sustainable and renewable energy sources. However, issues associated with their toxicity and short lifetime raise public concern for their long-term utility. Therefore, resolving these two problems is urgent for developing sustainable and environmentally friendly PSCs. In this study, a novel configuration of a lead-free light absorbing layer with a rudorffite structure (Ag<sub>2</sub>BiI<sub>5</sub>) is simulated, using the GPVDM software with TiO<sub>2</sub> and Spiro-OMeTAD as traditional electron and hole transport layers (HTLs). The proposed PSC structure is compared to other published results in the literature. In the meantime, by fitting the current density-voltage characteristic curves of theoretical data and experimental results, the precise photovoltaic parameters of the Ag<sub>2</sub>BiI<sub>5</sub> structure are extracted. After optimizing the thickness of the Ag<sub>2</sub>BiI<sub>5</sub> and replacing TiO<sub>2</sub> with SnO<sub>2</sub> and Spiro-OMeTAD with new a HTL of AgSCN, a PSC in the form of normal a FTO/SnO<sub>2</sub>/Ag<sub>2</sub>BiI<sub>5</sub>/AgSCN/Ag structure is designed. Further, the effect of the thickness of the AgSCN HTL, defect density of light absorbing layer, operating temperature and metal contacts on the photovoltaic performance of the device are thoroughly evaluated. Under the optimized AgSCN HTL thickness, the best theoretical efficiency of 3.61% is achieved for this normal configuration, which is the highest value reported among rudorffite light absorbing materials-based PSCs.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 3","pages":"600 - 612"},"PeriodicalIF":2.2000,"publicationDate":"2024-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Device modeling and performance analysis of an all-inorganic lead-free Ag2BiI5 rudorffite-based solar cell with AgSCN as HTL via GPVDM simulation software\",\"authors\":\"Samaneh Mozaffari\",\"doi\":\"10.1007/s10825-024-02157-6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The unprecedented photo-electronic conversion efficiency (PCE) of organic–inorganic lead perovskite solar cells (PSCs), over 25% within a span of 10 years, makes them an optimistic solution for sustainable and renewable energy sources. However, issues associated with their toxicity and short lifetime raise public concern for their long-term utility. Therefore, resolving these two problems is urgent for developing sustainable and environmentally friendly PSCs. In this study, a novel configuration of a lead-free light absorbing layer with a rudorffite structure (Ag<sub>2</sub>BiI<sub>5</sub>) is simulated, using the GPVDM software with TiO<sub>2</sub> and Spiro-OMeTAD as traditional electron and hole transport layers (HTLs). The proposed PSC structure is compared to other published results in the literature. In the meantime, by fitting the current density-voltage characteristic curves of theoretical data and experimental results, the precise photovoltaic parameters of the Ag<sub>2</sub>BiI<sub>5</sub> structure are extracted. After optimizing the thickness of the Ag<sub>2</sub>BiI<sub>5</sub> and replacing TiO<sub>2</sub> with SnO<sub>2</sub> and Spiro-OMeTAD with new a HTL of AgSCN, a PSC in the form of normal a FTO/SnO<sub>2</sub>/Ag<sub>2</sub>BiI<sub>5</sub>/AgSCN/Ag structure is designed. Further, the effect of the thickness of the AgSCN HTL, defect density of light absorbing layer, operating temperature and metal contacts on the photovoltaic performance of the device are thoroughly evaluated. Under the optimized AgSCN HTL thickness, the best theoretical efficiency of 3.61% is achieved for this normal configuration, which is the highest value reported among rudorffite light absorbing materials-based PSCs.</p></div>\",\"PeriodicalId\":620,\"journal\":{\"name\":\"Journal of Computational Electronics\",\"volume\":\"23 3\",\"pages\":\"600 - 612\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-04-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Computational Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10825-024-02157-6\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-024-02157-6","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Device modeling and performance analysis of an all-inorganic lead-free Ag2BiI5 rudorffite-based solar cell with AgSCN as HTL via GPVDM simulation software
The unprecedented photo-electronic conversion efficiency (PCE) of organic–inorganic lead perovskite solar cells (PSCs), over 25% within a span of 10 years, makes them an optimistic solution for sustainable and renewable energy sources. However, issues associated with their toxicity and short lifetime raise public concern for their long-term utility. Therefore, resolving these two problems is urgent for developing sustainable and environmentally friendly PSCs. In this study, a novel configuration of a lead-free light absorbing layer with a rudorffite structure (Ag2BiI5) is simulated, using the GPVDM software with TiO2 and Spiro-OMeTAD as traditional electron and hole transport layers (HTLs). The proposed PSC structure is compared to other published results in the literature. In the meantime, by fitting the current density-voltage characteristic curves of theoretical data and experimental results, the precise photovoltaic parameters of the Ag2BiI5 structure are extracted. After optimizing the thickness of the Ag2BiI5 and replacing TiO2 with SnO2 and Spiro-OMeTAD with new a HTL of AgSCN, a PSC in the form of normal a FTO/SnO2/Ag2BiI5/AgSCN/Ag structure is designed. Further, the effect of the thickness of the AgSCN HTL, defect density of light absorbing layer, operating temperature and metal contacts on the photovoltaic performance of the device are thoroughly evaluated. Under the optimized AgSCN HTL thickness, the best theoretical efficiency of 3.61% is achieved for this normal configuration, which is the highest value reported among rudorffite light absorbing materials-based PSCs.
期刊介绍：
he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.
In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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