Design, optimization, and performance analysis of GaP/Si heterojunction Fin-TFET with MoS2 nanoribbon channel

This article presents the design and optimization of GaP/Si heterojunction Fin-TFET with a MoS₂ channel. The elevated fin structure, coupled with ultrathin MoS₂ layers and the tuneable bandgap properties of MoS₂ material, significantly enhances gate control over the channel and improves device performance. Additionally, the GaP/Si heterojunction with a heavily doped n-type source pocket leads to a narrow barrier junction, promoting Band-to-Band Tunneling (BTBT). The optimized Fin-TFET boasts exceptional electrical characteristics: a high ON-current (7.72 × 10⁻⁵ A/μm), an ultra-low OFF-current (4.16 × 10⁻¹⁷ A/μm), and leading to an outstanding I_ON/I_OFF ratio (7.23 × 10¹²). Furthermore, the device demonstrates a steep subthreshold slope (SS) of 6 mV/dec (point) and 16.8 mV/dec (average), alongside impressive analog performance with a transconductance (g_m) of 2.75 × 10⁻⁴ S, a cut-off frequency (f_c) of 1.3 × 10¹² THz, and a gain-bandwidth product (GBP) of 0.17 × 10¹² THz. The entire analysis was conducted utilizing the Sentaurus TCAD-3D simulation tool.