Ifrah Shakeel, Shazia Rashid, Farooq A. Khanday, Mudasir A. Khanday
{"title":"用于无标记生物传感的介质调制异质材料双栅隧道场效应晶体管","authors":"Ifrah Shakeel, Shazia Rashid, Farooq A. Khanday, Mudasir A. Khanday","doi":"10.1002/jnm.3232","DOIUrl":null,"url":null,"abstract":"<p>This work proposes a novel double gate hetero-material tunnel field effect transistor for label free biosensing applications. The device consists of III-V semiconductor gallium arsenide (GaAs) which serves as a substrate. Source and drain regions made of Germanium are used due to its compatibility with GaAs. Cavities of 15 × 1.5 nm are created near source-channel junctions for the biomolecules to be placed in. The <i>I</i><sub>ON</sub> sensitivity of 2.23 × 10<sup>6</sup> for neutral biomolecules has been obtained from 2D simulations using ATLAS TCAD software. Furthermore, transconductance sensitivity of 2.27 × 10<sup>6</sup>, <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> sensitivity of 2.46 × 10<sup>5</sup>, subthreshold swing (SS) sensitivity of 28.6 mV/decade and threshold voltage sensitivity of 1.2 mV for neutral biomolecules is obtained. The <i>I</i><sub>ON</sub> sensitivity of 3.93 × 10<sup>6</sup> and 1.42 × 10<sup>6</sup> for positively and negatively charged biomolecules respectively has been obtained. Also, SS sensitivity of 28.3 and 28.8 mV/decade for positively and negatively charged biomolecules respectively has been observed. <i>I</i><sub>ON</sub> sensitivity shows that the proposed device is 1000× better than the conventional one.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":null,"pages":null},"PeriodicalIF":1.6000,"publicationDate":"2024-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dielectrically modulated hetero-material double gate tunnel field-effect transistor for label free biosensing\",\"authors\":\"Ifrah Shakeel, Shazia Rashid, Farooq A. Khanday, Mudasir A. Khanday\",\"doi\":\"10.1002/jnm.3232\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>This work proposes a novel double gate hetero-material tunnel field effect transistor for label free biosensing applications. The device consists of III-V semiconductor gallium arsenide (GaAs) which serves as a substrate. Source and drain regions made of Germanium are used due to its compatibility with GaAs. Cavities of 15 × 1.5 nm are created near source-channel junctions for the biomolecules to be placed in. The <i>I</i><sub>ON</sub> sensitivity of 2.23 × 10<sup>6</sup> for neutral biomolecules has been obtained from 2D simulations using ATLAS TCAD software. Furthermore, transconductance sensitivity of 2.27 × 10<sup>6</sup>, <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> sensitivity of 2.46 × 10<sup>5</sup>, subthreshold swing (SS) sensitivity of 28.6 mV/decade and threshold voltage sensitivity of 1.2 mV for neutral biomolecules is obtained. The <i>I</i><sub>ON</sub> sensitivity of 3.93 × 10<sup>6</sup> and 1.42 × 10<sup>6</sup> for positively and negatively charged biomolecules respectively has been obtained. Also, SS sensitivity of 28.3 and 28.8 mV/decade for positively and negatively charged biomolecules respectively has been observed. <i>I</i><sub>ON</sub> sensitivity shows that the proposed device is 1000× better than the conventional one.</p>\",\"PeriodicalId\":50300,\"journal\":{\"name\":\"International Journal of Numerical Modelling-Electronic Networks Devices and Fields\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2024-04-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Numerical Modelling-Electronic Networks Devices and Fields\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/jnm.3232\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/jnm.3232","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
This work proposes a novel double gate hetero-material tunnel field effect transistor for label free biosensing applications. The device consists of III-V semiconductor gallium arsenide (GaAs) which serves as a substrate. Source and drain regions made of Germanium are used due to its compatibility with GaAs. Cavities of 15 × 1.5 nm are created near source-channel junctions for the biomolecules to be placed in. The ION sensitivity of 2.23 × 106 for neutral biomolecules has been obtained from 2D simulations using ATLAS TCAD software. Furthermore, transconductance sensitivity of 2.27 × 106, ION/IOFF sensitivity of 2.46 × 105, subthreshold swing (SS) sensitivity of 28.6 mV/decade and threshold voltage sensitivity of 1.2 mV for neutral biomolecules is obtained. The ION sensitivity of 3.93 × 106 and 1.42 × 106 for positively and negatively charged biomolecules respectively has been obtained. Also, SS sensitivity of 28.3 and 28.8 mV/decade for positively and negatively charged biomolecules respectively has been observed. ION sensitivity shows that the proposed device is 1000× better than the conventional one.
期刊介绍：
Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models.
The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics.
Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.
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