通过交流电低温退火提升 CMOS-MEMS 复合谐振器的 Q 值

A. Zope, K. Bhosale, Sheng-Shian Li
{"title":"通过交流电低温退火提升 CMOS-MEMS 复合谐振器的 Q 值","authors":"A. Zope, K. Bhosale, Sheng-Shian Li","doi":"10.1109/MEMS58180.2024.10439520","DOIUrl":null,"url":null,"abstract":"In this work a CMOS-MEMS balanced drive and sense thermal-piezoresistive resonator’s (CMOS-MEMS TPR) quality factor (Q) is doubled by ac drive annealing at low temperature (< 250°C), which overcomes reliability failure associated with high-current density DC annealing in CMOS. The design exploits the routing flexibility in CMOS to optimize the placement of high-loss metals for efficient transduction and reduced annealing current. The system can be easily implemented as a part of existing oscillator circuits without an additional cost in standard CMOS. Commercial components were used to realize an oscillator and characterize its phase noise (-107 dBc/Hz at 1 kHz offset) and Allan Deviation (75 ppm).","PeriodicalId":518439,"journal":{"name":"2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"111 4","pages":"561-564"},"PeriodicalIF":0.0000,"publicationDate":"2024-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Q-Boosting Of Composite CMOS-MEMS Resonators By AC Current Low-Temperature Annealing\",\"authors\":\"A. Zope, K. Bhosale, Sheng-Shian Li\",\"doi\":\"10.1109/MEMS58180.2024.10439520\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work a CMOS-MEMS balanced drive and sense thermal-piezoresistive resonator’s (CMOS-MEMS TPR) quality factor (Q) is doubled by ac drive annealing at low temperature (< 250°C), which overcomes reliability failure associated with high-current density DC annealing in CMOS. The design exploits the routing flexibility in CMOS to optimize the placement of high-loss metals for efficient transduction and reduced annealing current. The system can be easily implemented as a part of existing oscillator circuits without an additional cost in standard CMOS. Commercial components were used to realize an oscillator and characterize its phase noise (-107 dBc/Hz at 1 kHz offset) and Allan Deviation (75 ppm).\",\"PeriodicalId\":518439,\"journal\":{\"name\":\"2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS)\",\"volume\":\"111 4\",\"pages\":\"561-564\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-01-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMS58180.2024.10439520\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMS58180.2024.10439520","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

在这项工作中,CMOS-MEMS 平衡驱动和感应热压阻谐振器(CMOS-MEMS TPR)的品质因数(Q)在低温(< 250°C)下通过交流驱动退火提高了一倍,从而克服了 CMOS 高电流密度直流退火带来的可靠性故障。该设计利用了 CMOS 的布线灵活性,优化了高损耗金属的位置,从而实现了高效传输并降低了退火电流。该系统可作为现有振荡器电路的一部分轻松实现,无需增加标准 CMOS 的成本。我们使用商用元件实现了一个振荡器,并鉴定了其相位噪声(1 kHz 偏移时为 -107 dBc/Hz)和阿伦偏差(75 ppm)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Q-Boosting Of Composite CMOS-MEMS Resonators By AC Current Low-Temperature Annealing
In this work a CMOS-MEMS balanced drive and sense thermal-piezoresistive resonator’s (CMOS-MEMS TPR) quality factor (Q) is doubled by ac drive annealing at low temperature (< 250°C), which overcomes reliability failure associated with high-current density DC annealing in CMOS. The design exploits the routing flexibility in CMOS to optimize the placement of high-loss metals for efficient transduction and reduced annealing current. The system can be easily implemented as a part of existing oscillator circuits without an additional cost in standard CMOS. Commercial components were used to realize an oscillator and characterize its phase noise (-107 dBc/Hz at 1 kHz offset) and Allan Deviation (75 ppm).
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信