基于 Sb2Se3 的太阳能电池的数值模拟

IF 1.2 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Chalcogenide Letters Pub Date : 2024-03-26 DOI:10.15251/cl.2024.213.229

S. H. Liu, J. R. Yuan, Y. Wu, X. H. Deng, Q. M. Yu

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引用次数: 0

摘要

硒化锑（Sb2Se3）具有卓越的光电性能，使其成为下一代太阳能电池的理想选择。在这项研究中，使用 SCAPS-1D 程序对具有 Al/FTO/CdS/Sb2Se3/Mo 结构的太阳能电池进行了建模和数值分析。此外，还提出了一种使用 Sb2S3 作为背表面场（BSF）层的 Al/FTO/CdS/Sb2Se3/Sb2S3/Mo 太阳能电池结构。对太阳能电池的光伏特性进行了全面检查。优化过程包括调整工作温度、串联和并联电阻、掺杂浓度、块状缺陷密度、背接触金属功函数和吸收层厚度。优化后的基于 Sb2Se3 材料的 Sb2Se3 太阳能电池的转换效率达到 28.91%，表明基于 Sb2Se3 材料的太阳能电池具有很大的进一步开发潜力。

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Numerical simulation of Sb2Se3-based solar cells

Antimony selenide (Sb2Se3) has remarkable optoelectronic capabilities that make it a promising option for the next generation solar cells. In this work, a solar cell with the structure Al/FTO/CdS/Sb2Se3/Mo is modeled and numerically analyzed using SCAPS-1D program. Furthermore, a Al/FTO/CdS/Sb2Se3/Sb2S3/Mo solar cell structure that uses Sb2S3 as the back surface field (BSF) layer is proposed. A comprehensive examination of photovoltaic characteristics for the solar cells was carried out. The optimization process involved adjusting the operating temperature, series and shunt resistance, doping concentration, bulk defect density, back contact metal work function, and thickness of the absorber layer. The optimized Sb2Se3-based solar cell with Sb2S3 material showed a conversion efficiency of 28.91%, suggesting that Sb2Se3-based solar cells have a great deal of potential for further development.

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来源期刊

Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

1.80

自引率

20.00%

发文量

审稿时长

1 months

期刊介绍： Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.